FQB9N50TM Tech Spezifikatioune
Fairchild Semiconductor - FQB9N50TM technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - FQB9N50TM
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Fairchild (onsemi) | |
Vgs (th) (Max) @ Id | 5V @ 250µA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | D2PAK (TO-263) | |
Serie | QFET® | |
Rds On (Max) @ Id, Vgs | 730mOhm @ 4.5A, 10V | |
Power Dissipation (Max) | 3.13W (Ta), 147W (Tc) | |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
Package protegéieren | Bulk |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 1450 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 500 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 9A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor FQB9N50TM.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | FQB9N50TM | FQB9N08LTM | FQB9N25CTM | FQB9P25TM |
Hiersteller | Fairchild Semiconductor | onsemi | onsemi | onsemi |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Rds On (Max) @ Id, Vgs | 730mOhm @ 4.5A, 10V | 210mOhm @ 4.65A, 10V | 430mOhm @ 4.4A, 10V | 620mOhm @ 4.7A, 10V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 5V, 10V | 10V | 10V |
Vgs (Max) | ±30V | ±20V | ±30V | ±30V |
Entworf fir Source Voltage (Vdss) | 500 V | 80 V | 250 V | 250 V |
Input Capacitance (Ciss) (Max) @ Vds | 1450 pF @ 25 V | 280 pF @ 25 V | 710 pF @ 25 V | 1180 pF @ 25 V |
Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 10 V | 6.1 nC @ 5 V | 35 nC @ 10 V | 38 nC @ 10 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 9A (Tc) | 9.3A (Tc) | 8.8A (Tc) | 9.4A (Tc) |
Power Dissipation (Max) | 3.13W (Ta), 147W (Tc) | 3.75W (Ta), 40W (Tc) | 3.13W (Ta), 74W (Tc) | 3.13W (Ta), 120W (Tc) |
Vgs (th) (Max) @ Id | 5V @ 250µA | 2V @ 250µA | 4V @ 250µA | 5V @ 250µA |
Supplier Device Package | D2PAK (TO-263) | D²PAK (TO-263) | D²PAK (TO-263) | D²PAK (TO-263) |
Package protegéieren | Bulk | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
FET Feature | - | - | - | - |
FET Typ | N-Channel | N-Channel | N-Channel | P-Channel |
Serie | QFET® | QFET® | QFET® | QFET® |
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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