FMM7G50US60I Tech Spezifikatioune
Fairchild Semiconductor - FMM7G50US60I technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - FMM7G50US60I
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Fairchild (onsemi) | |
| Voltage - Collector Emitter Breakdown (Max) | 600 V | |
| Vce (on) (Max) @ Vge, Ic | 2.7V @ 15V, 50A | |
| Supplier Device Package | - | |
| Serie | - | |
| Power - Max | 139 W | |
| Package / Case | Module | |
| Package protegéieren | Bulk | |
| Operatioun Temperatur | -40°C ~ 150°C (TJ) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| NTC Thermistor | Yes | |
| Mounting Type | Through Hole | |
| Input Capacitance (Cies) @ Vce | 3.565 nF @ 30 V | |
| Input | Three Phase Bridge Rectifier | |
| IGBT Type | - | |
| Aktuell - Kollektorat Cutoff (Max) | 250 µA | |
| Aktuell - Sammler (Ic) (Max) | 50 A | |
| Konfiguratioun | Three Phase Inverter with Brake |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor FMM7G50US60I.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | FMM7G50US60I | FMM7G30US60N | FMM7G50US60N | FMM7G20US60I |
| Hiersteller | Fairchild Semiconductor | Fairchild Semiconductor | Fairchild Semiconductor | Fairchild Semiconductor |
| Power - Max | 139 W | 104 W | 139 W | 89 W |
| NTC Thermistor | Yes | Yes | Yes | Yes |
| Konfiguratioun | Three Phase Inverter with Brake | Three Phase Inverter with Brake | Three Phase Inverter with Brake | Three Phase Inverter with Brake |
| Supplier Device Package | - | - | - | - |
| Package protegéieren | Bulk | Bulk | Bulk | Bulk |
| Package / Case | Module | Module | Module | Module |
| Aktuell - Sammler (Ic) (Max) | 50 A | 30 A | 50 A | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V | 600 V | 600 V | 600 V |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Operatioun Temperatur | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) |
| Input Capacitance (Cies) @ Vce | 3.565 nF @ 30 V | 2.1 nF @ 30 V | 3.565 nF @ 30 V | 1.277 nF @ 30 V |
| Vce (on) (Max) @ Vge, Ic | 2.7V @ 15V, 50A | 2.7V @ 15V, 30A | 2.7V @ 15V, 50A | 2.7V @ 15V, 20A |
| IGBT Type | - | - | - | - |
| Serie | - | - | - | - |
| Input | Three Phase Bridge Rectifier | Three Phase Bridge Rectifier | Three Phase Bridge Rectifier | Three Phase Bridge Rectifier |
| Aktuell - Kollektorat Cutoff (Max) | 250 µA | 250 µA | 250 µA | 250 µA |
FMMT2222ATADiodes IncorporatedTRANS NPN 40V 0.6A SOT23-3FMMD7000ZETEXFMM7G30US60NFairchild SemiconductorINSULATED GATE BIPOLAR TRANSISTOFMMD914TADiodes IncorporatedDIODE GEN PURP 75V 75MA SOT23-3FMM7G50US60NFairchild SemiconductorINSULATED GATE BIPOLAR TRANSISTOFMMD6050ATADIODES/ZETEXFMM7G30US60SIFairchild (onsemi)IGBT ModuleFMM7G50US601Fairchild (onsemi)IGBT ModuleFMM7G30US60Fairchild (onsemi)IGBT ModuleFMM7G20US60Fairchild (onsemi)IGBT ModuleFMMD6050TAZETEXFMM7G20US60IFairchild SemiconductorINSULATED GATE BIPOLAR TRANSISTOFMM7G30US60SNFairchild (onsemi)IGBT ModuleFMM7G30US60S1Fairchild (onsemi)IGBT Module
FMMT2222RDiodes IncorporatedFMMD2837TAPBFZETEXFMM7G30US60IFairchild SemiconductorINSULATED GATE BIPOLAR TRANSISTOFMMD7000TAZETZX/DIOES| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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