FES16BT Tech Spezifikatioune
Fairchild Semiconductor - FES16BT technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - FES16BT
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Fairchild (onsemi) | |
| Voltage - Viru (Vf) (Max) @ Wann | 950 mV @ 8 A | |
| Voltage - DC Reverse (Vr) (Max) | 100 V | |
| Technologie | Standard | |
| Supplier Device Package | TO-220-2 | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Serie | - | |
| Reverse Recovery Time (trr) | 35 ns |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | TO-220-2 | |
| Package protegéieren | Tube | |
| Operatiounstemperatur - Junction | -65°C ~ 150°C | |
| Mounting Type | Through Hole | |
| Aktuell - Reverse Leakage @ Vr | 10 µA @ 100 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 16A | |
| Capacitance @ Vr, F. | 170pF @ 4V, 1MHz |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor FES16BT.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | FES16BT | FES16CT | FES16DT-E3/45 | FES16GT-E3/45 |
| Hiersteller | Fairchild Semiconductor | onsemi | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
| Operatiounstemperatur - Junction | -65°C ~ 150°C | -65°C ~ 150°C | -65°C ~ 150°C | -65°C ~ 150°C |
| Supplier Device Package | TO-220-2 | TO-220-2 | TO-220AC | TO-220AC |
| Package protegéieren | Tube | Tube | Tube | Tube |
| Reverse Recovery Time (trr) | 35 ns | 35 ns | 35 ns | 50 ns |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 16A | 16A | 16A | 16A |
| Serie | - | - | - | - |
| Package / Case | TO-220-2 | TO-220-2 | TO-220-2 | TO-220-2 |
| Voltage - DC Reverse (Vr) (Max) | 100 V | 150 V | 200 V | 400 V |
| Technologie | Standard | Standard | Standard | Standard |
| Voltage - Viru (Vf) (Max) @ Wann | 950 mV @ 8 A | 950 mV @ 8 A | 975 mV @ 16 A | 1.3 V @ 16 A |
| Aktuell - Reverse Leakage @ Vr | 10 µA @ 100 V | 10 µA @ 150 V | 10 µA @ 200 V | 10 µA @ 400 V |
| Capacitance @ Vr, F. | 170pF @ 4V, 1MHz | 170pF @ 4V, 1MHz | - | - |
FES16CTonsemiDIODE GEN PURP 150V 16A TO220-2FES16DT-E3/45Vishay General Semiconductor - Diodes DivisionDIODE GEN PURP 200V 16A TO220ACFES16GT-E3/45Vishay General Semiconductor - Diodes DivisionDIODE GEN PURP 400V 16A TO220ACFES16FT MOSGI
FES16DTFairchild SemiconductorDIODE GEN PURP 200V 16A TO220-2FES16GTonsemiDIODE GEN PURP 400V 16A TO220-2FES16HTFairchild SemiconductorDIODE GEN PURP 500V 16A TO220-2FES16DTRFairchild SemiconductorDIODE GEN PURP 200V 16A TO220-2FES16FT-E3/45Vishay General Semiconductor - Diodes DivisionDIODE GEN PURP 300V 16A TO220ACFES16HTonsemiDIODE GEN PURP 500V 16A TO220-2FES16JTFairchild SemiconductorRECTIFIER DIODEFES16BTonsemiDIODE GEN PURP 100V 16A TO220-2FES16FTonsemiDIODE GEN PURP 300V 16A TO220-2FES16DTRonsemiDIODE GEN PURP 200V 16A TO220-2FES16DTonsemiDIODE GEN PURP 200V 16A TO220-2FES16FTFairchild SemiconductorDIODE GEN PURP 300V 16A TO220-2FES16ATonsemiDIODE GEN PURP 50V 16A TO220-2
FES10DT-E3/45Electro-Films (EFI) / Vishay| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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