FEP16CT Tech Spezifikatioune
Fairchild Semiconductor - FEP16CT technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - FEP16CT
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Fairchild (onsemi) | |
| Voltage - Viru (Vf) (Max) @ Wann | 950 mV @ 8 A | |
| Voltage - DC Reverse (Vr) (Max) | 150 V | |
| Technologie | Standard | |
| Supplier Device Package | TO-220-3 | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Serie | - | |
| Reverse Recovery Time (trr) | 35 ns |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | TO-220-3 | |
| Package protegéieren | Tube | |
| Operatiounstemperatur - Junction | -55°C ~ 150°C | |
| Mounting Type | Through Hole | |
| Diode Configuration | 1 Pair Common Cathode | |
| Aktuell - Reverse Leakage @ Vr | 10 µA @ 150 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) (pro Diode) | 16A |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor FEP16CT.
| Produktiounsattriff |  |
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|
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|---|---|---|---|---|
| Part Number | FEP16CT | FEP16BT | FEP16DT | FEP16CT-E3/45 |
| Hiersteller | Fairchild Semiconductor | onsemi | onsemi | Vishay General Semiconductor - Diodes Division |
| Aktuell - duerchschnëttlech rektifizéiert (Io) (pro Diode) | 16A | 16A | 16A | 16A |
| Operatiounstemperatur - Junction | -55°C ~ 150°C | -55°C ~ 150°C | -55°C ~ 150°C | -55°C ~ 150°C |
| Technologie | Standard | Standard | Standard | Standard |
| Voltage - DC Reverse (Vr) (Max) | 150 V | 100 V | 200 V | 150 V |
| Diode Configuration | 1 Pair Common Cathode | 1 Pair Common Cathode | 1 Pair Common Cathode | 1 Pair Common Cathode |
| Reverse Recovery Time (trr) | 35 ns | 35 ns | 35 ns | 35 ns |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Voltage - Viru (Vf) (Max) @ Wann | 950 mV @ 8 A | 950 mV @ 8 A | 950 mV @ 8 A | 950 mV @ 8 A |
| Supplier Device Package | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| Aktuell - Reverse Leakage @ Vr | 10 µA @ 150 V | 10 µA @ 100 V | 10 µA @ 200 V | 10 µA @ 150 V |
| Serie | - | - | - | - |
| Package protegéieren | Tube | Tube | Tube | Tube |
FEP16BTonsemiDIODE ARRAY GP 100V 16A TO220ABFEP16DTonsemiDIODE ARRAY GP 200V 16A TO220ABFEP16CT-E3/45Vishay General Semiconductor - Diodes DivisionDIODE ARRAY GP 150V 16A TO220AB
FEP16FTFairchild SemiconductorRECTIFIER DIODEFEP16GTonsemiDIODE ARRAY GP 400V 16A TO220ABFEP16BTAFairchild SemiconductorRECTIFIER DIODEFEP16DTDonsemiDIODE ARRAY GP 200V 8A TO220ABFEP16DT-E3/45Vishay General Semiconductor - Diodes DivisionDIODE ARRAY GP 200V 16A TO220ABFEP16CTonsemiDIODE ARRAY GP 150V 16A TO220ABFEP16FT-E3/45Vishay General Semiconductor - Diodes DivisionDIODE ARRAY GP 300V 16A TO220ABFEP16DTAonsemiDIODE ARRAY GP 200V 16A TO220ABFEP16ATonsemiDIODE ARRAY GP 50V 16A TO220ABFEP16DTFairchild SemiconductorRECTIFIER DIODEFEP16BTAonsemiDIODE ARRAY GP 100V 16A TO220ABFEP16FTonsemiDIODE ARRAY GP 300V 16A TO220ABFEP16BT-E3/45Vishay General Semiconductor - Diodes DivisionDIODE ARRAY GP 100V 16A TO220ABFEP16FTAonsemiDIODE ARRAY GP 300V 16A TO220ABFEP16FTDonsemiDIODE ARRAY GP 300V 16A TO220AB| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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