FDZ294N Tech Spezifikatioune
Fairchild Semiconductor - FDZ294N technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - FDZ294N
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Fairchild (onsemi) | |
Vgs (th) (Max) @ Id | 1.5V @ 250µA | |
Vgs (Max) | ±12V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | 9-BGA (1.5x1.6) | |
Serie | PowerTrench® | |
Rds On (Max) @ Id, Vgs | 23mOhm @ 6A, 4.5V | |
Power Dissipation (Max) | 1.7W (Ta) | |
Package / Case | 9-VFBGA | |
Package protegéieren | Bulk |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 670 pF @ 10 V | |
Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 4.5 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 4.5V | |
Entworf fir Source Voltage (Vdss) | 20 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6A (Ta) |
ATTRESSIOUN | BESCHREIWUNG |
---|---|
RoHs Status | |
Fiichtegkeet Sensibilitéitsniveau (MSL) | |
Erreecht Status | |
ECCN | EAR99 |
HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor FDZ294N.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | FDZ294N | FDZ299P | FDZ371PZ | FDZ298N |
Hiersteller | Fairchild Semiconductor | onsemi | onsemi | onsemi |
Package / Case | 9-VFBGA | 9-WFBGA | 4-XFBGA, WLCSP | 9-WFBGA |
Serie | PowerTrench® | PowerTrench® | PowerTrench® | PowerTrench® |
Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 4.5 V | 9 nC @ 4.5 V | 17 nC @ 4.5 V | 10 nC @ 4.5 V |
Package protegéieren | Bulk | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 4.5V | 2.5V, 4.5V | 1.5V, 4.5V | 2.5V, 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 670 pF @ 10 V | 742 pF @ 10 V | 1000 pF @ 10 V | 680 pF @ 10 V |
Power Dissipation (Max) | 1.7W (Ta) | 1.7W (Ta) | 1.7W (Ta) | 1.7W (Ta) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Rds On (Max) @ Id, Vgs | 23mOhm @ 6A, 4.5V | 55mOhm @ 4.6A, 4.5V | 75mOhm @ 2A, 4.5V | 27mOhm @ 6A, 4.5V |
Entworf fir Source Voltage (Vdss) | 20 V | 20 V | 20 V | 20 V |
Supplier Device Package | 9-BGA (1.5x1.6) | 9-BGA (2x2.1) | 4-WLCSP (1x1) | 9-BGA (1.5x1.6) |
Vgs (Max) | ±12V | ±12V | ±8V | ±12V |
FET Typ | N-Channel | P-Channel | P-Channel | N-Channel |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Vgs (th) (Max) @ Id | 1.5V @ 250µA | 1.5V @ 250µA | 1V @ 250µA | 1.5V @ 250µA |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6A (Ta) | 4.6A (Ta) | 3.7A (Ta) | 6A (Ta) |
FET Feature | - | - | - | - |
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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