FDW2503NZ Tech Spezifikatioune
Fairchild Semiconductor - FDW2503NZ technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - FDW2503NZ
Produktiounsattriff | Attributer Wäert | |
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Hiersteller | Fairchild (onsemi) | |
Vgs (th) (Max) @ Id | 1.5V @ 250µA | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | 8-TSSOP | |
Serie | PowerTrench® | |
Rds On (Max) @ Id, Vgs | 20mOhm @ 5.5A, 4.5V | |
Power - Max | 600mW | |
Package / Case | 8-TSSOP (0.173", 4.40mm Width) | |
Package protegéieren | Bulk |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 1286pF @ 10V | |
Gate Charge (Qg) (Max) @ Vgs | 17nC @ 4.5V | |
FET Feature | Logic Level Gate | |
Entworf fir Source Voltage (Vdss) | 20V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 5.5A | |
Konfiguratioun | 2 N-Channel (Dual) | |
Basis Produktnummer | FDW25 |
ATTRESSIOUN | BESCHREIWUNG |
---|---|
RoHs Status | |
Fiichtegkeet Sensibilitéitsniveau (MSL) | |
Erreecht Status | |
ECCN | EAR99 |
HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor FDW2503NZ.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | FDW2503NZ | FDW2504P | FDW2502PZ | FDW2503N |
Hiersteller | Fairchild Semiconductor | Fairchild Semiconductor | Fairchild Semiconductor | onsemi |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 5.5A | 3.8A | 4.4A (Ta) | 5.5A |
Package protegéieren | Bulk | Bulk | Bulk | Tape & Reel (TR) |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Package / Case | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP (0.173", 4.40mm Width) |
Supplier Device Package | 8-TSSOP | 8-TSSOP | 8-TSSOP | 8-TSSOP |
Rds On (Max) @ Id, Vgs | 20mOhm @ 5.5A, 4.5V | 43mOhm @ 3.8A, 4.5V | 35mOhm @ 4.4A, 4.5V | 21mOhm @ 5.5A, 4.5V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Basis Produktnummer | FDW25 | FDW25 | FDW25 | FDW25 |
Power - Max | 600mW | 600mW | 600mW (Ta) | 600mW |
FET Feature | Logic Level Gate | Logic Level Gate | - | Logic Level Gate |
Vgs (th) (Max) @ Id | 1.5V @ 250µA | 1.5V @ 250µA | 1.5V @ 250µA | 1.5V @ 250µA |
Input Capacitance (Ciss) (Max) @ Vds | 1286pF @ 10V | 1030pF @ 10V | 1465pF @ 10V | 1082pF @ 10V |
Konfiguratioun | 2 N-Channel (Dual) | 2 P-Channel (Dual) | 2 P-Channel (Dual) | 2 N-Channel (Dual) |
Entworf fir Source Voltage (Vdss) | 20V | 20V | 20V | 20V |
Serie | PowerTrench® | PowerTrench® | PowerTrench® | PowerTrench® |
Gate Charge (Qg) (Max) @ Vgs | 17nC @ 4.5V | 16nC @ 4.5V | 21nC @ 5V | 17nC @ 4.5V |
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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