FDS6994S Tech Spezifikatioune
Fairchild Semiconductor - FDS6994S technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - FDS6994S
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Fairchild (onsemi) | |
Vgs (th) (Max) @ Id | 3V @ 250µA | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | 8-SOIC | |
Serie | PowerTrench®, SyncFET™ | |
Rds On (Max) @ Id, Vgs | 21mOhm @ 6.9A, 10V | |
Power - Max | 900mW | |
Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
Package protegéieren | Bulk |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 800pF @ 15V | |
Gate Charge (Qg) (Max) @ Vgs | 12nC @ 5V | |
FET Feature | Logic Level Gate | |
Entworf fir Source Voltage (Vdss) | 30V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6.9A, 8.2A | |
Konfiguratioun | 2 N-Channel (Dual) | |
Basis Produktnummer | FDS69 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor FDS6994S.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | FDS6994S | FDS6994S | FDS6990S | FDS7060N7 |
Hiersteller | Fairchild Semiconductor | onsemi | Fairchild Semiconductor | Fairchild Semiconductor |
Konfiguratioun | 2 N-Channel (Dual) | 2 N-Channel (Dual) | 2 N-Channel (Dual) | - |
Vgs (th) (Max) @ Id | 3V @ 250µA | 3V @ 250µA | 3V @ 1mA | 3V @ 250µA |
Power - Max | 900mW | 900mW | 900mW (Ta) | - |
Input Capacitance (Ciss) (Max) @ Vds | 800pF @ 15V | 800pF @ 15V | 1233pF @ 15V | 3274 pF @ 15 V |
Basis Produktnummer | FDS69 | FDS69 | FDS6990 | - |
Supplier Device Package | 8-SOIC | 8-SOIC | 8-SOIC | 8-SO |
Package protegéieren | Bulk | Tape & Reel (TR) | Bulk | Bulk |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6.9A, 8.2A | 6.9A, 8.2A | 7.5A (Ta) | 19A (Ta) |
Serie | PowerTrench®, SyncFET™ | PowerTrench®, SyncFET™ | PowerTrench® | PowerTrench® |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
FET Feature | Logic Level Gate | Logic Level Gate | - | - |
Gate Charge (Qg) (Max) @ Vgs | 12nC @ 5V | 12nC @ 5V | 16nC @ 5V | 56 nC @ 5 V |
Rds On (Max) @ Id, Vgs | 21mOhm @ 6.9A, 10V | 21mOhm @ 6.9A, 10V | 22mOhm @ 7.5A, 10V | 5mOhm @ 19A, 10V |
Package / Case | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) |
Entworf fir Source Voltage (Vdss) | 30V | 30V | 30V | 30 V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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