FDS6681Z Tech Spezifikatioune
Fairchild Semiconductor - FDS6681Z technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - FDS6681Z
Produktiounsattriff | Attributer Wäert | |
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Hiersteller | Fairchild (onsemi) | |
Vgs (th) (Max) @ Id | 3V @ 250µA | |
Vgs (Max) | ±25V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | 8-SOIC | |
Serie | PowerTrench® | |
Rds On (Max) @ Id, Vgs | 4.6mOhm @ 20A, 10V | |
Power Dissipation (Max) | 2.5W (Ta) | |
Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
Package protegéieren | Bulk |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 7540 pF @ 15 V | |
Gate Charge (Qg) (Max) @ Vgs | 260 nC @ 10 V | |
FET Typ | P-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 30 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 20A (Ta) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor FDS6681Z.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | FDS6681Z | FDS6681Z | FDS6682 | FDS6680S |
Hiersteller | Fairchild Semiconductor | onsemi | Fairchild Semiconductor | onsemi |
Power Dissipation (Max) | 2.5W (Ta) | 2.5W (Ta) | 1W (Ta) | 2.5W (Ta) |
Package protegéieren | Bulk | Tape & Reel (TR) | Bulk | Tape & Reel (TR) |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
Gate Charge (Qg) (Max) @ Vgs | 260 nC @ 10 V | 260 nC @ 10 V | 31 nC @ 5 V | 24 nC @ 5 V |
Vgs (Max) | ±25V | ±25V | ±20V | ±20V |
Vgs (th) (Max) @ Id | 3V @ 250µA | 3V @ 250µA | 3V @ 250µA | 3V @ 250µA |
FET Typ | P-Channel | P-Channel | N-Channel | N-Channel |
Entworf fir Source Voltage (Vdss) | 30 V | 30 V | 30 V | 30 V |
Supplier Device Package | 8-SOIC | 8-SOIC | 8-SOIC | 8-SOIC |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Rds On (Max) @ Id, Vgs | 4.6mOhm @ 20A, 10V | 4.6mOhm @ 20A, 10V | 7.5mOhm @ 14A, 10V | 11mOhm @ 11.5A, 10V |
FET Feature | - | - | - | - |
Serie | PowerTrench® | PowerTrench® | PowerTrench® | PowerTrench® |
Input Capacitance (Ciss) (Max) @ Vds | 7540 pF @ 15 V | 7540 pF @ 15 V | 2310 pF @ 15 V | 2010 pF @ 15 V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 20A (Ta) | 20A (Ta) | 14A (Ta) | 11.5A (Ta) |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Package / Case | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) |
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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