FDS6570A Tech Spezifikatioune
Fairchild Semiconductor - FDS6570A technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - FDS6570A
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Fairchild (onsemi) | |
Vgs (th) (Max) @ Id | 1.5V @ 250µA | |
Vgs (Max) | ±8V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | 8-SOIC | |
Serie | PowerTrench® | |
Rds On (Max) @ Id, Vgs | 7.5mOhm @ 15A, 4.5V | |
Power Dissipation (Max) | 2.5W (Ta) | |
Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
Package protegéieren | Bulk |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 4700 pF @ 10 V | |
Gate Charge (Qg) (Max) @ Vgs | 66 nC @ 5 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 4.5V | |
Entworf fir Source Voltage (Vdss) | 20 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 15A (Ta) |
ATTRESSIOUN | BESCHREIWUNG |
---|---|
RoHs Status | |
Fiichtegkeet Sensibilitéitsniveau (MSL) | |
Erreecht Status | |
ECCN | EAR99 |
HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor FDS6570A.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | FDS6570A | FDS6570A | FDS6572A | FDS6375 |
Hiersteller | Fairchild Semiconductor | onsemi | Fairchild Semiconductor | onsemi |
Rds On (Max) @ Id, Vgs | 7.5mOhm @ 15A, 4.5V | 7.5mOhm @ 15A, 4.5V | 6mOhm @ 16A, 4.5V | 24mOhm @ 8A, 4.5V |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Entworf fir Source Voltage (Vdss) | 20 V | 20 V | 20 V | 20 V |
Package / Case | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) |
Power Dissipation (Max) | 2.5W (Ta) | 2.5W (Ta) | 2.5W (Ta) | 2.5W (Ta) |
Vgs (Max) | ±8V | ±8V | ±12V | ±8V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Input Capacitance (Ciss) (Max) @ Vds | 4700 pF @ 10 V | 4700 pF @ 10 V | 5914 pF @ 10 V | 2694 pF @ 10 V |
Serie | PowerTrench® | PowerTrench® | PowerTrench® | PowerTrench® |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 15A (Ta) | 15A (Ta) | 16A (Ta) | 8A (Ta) |
Gate Charge (Qg) (Max) @ Vgs | 66 nC @ 5 V | 66 nC @ 5 V | 80 nC @ 4.5 V | 36 nC @ 4.5 V |
Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 4.5V | 2.5V, 4.5V | 2.5V, 4.5V | 2.5V, 4.5V |
Vgs (th) (Max) @ Id | 1.5V @ 250µA | 1.5V @ 250µA | 1.5V @ 250µA | 1.5V @ 250µA |
Supplier Device Package | 8-SOIC | 8-SOIC | 8-SOIC | 8-SOIC |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
FET Feature | - | - | - | - |
Package protegéieren | Bulk | Tape & Reel (TR) | Bulk | Tape & Reel (TR) |
FET Typ | N-Channel | N-Channel | N-Channel | P-Channel |
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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