FDS4470 Tech Spezifikatioune
Fairchild Semiconductor - FDS4470 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - FDS4470
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Fairchild (onsemi) | |
| Vgs (th) (Max) @ Id | 5V @ 250µA | |
| Vgs (Max) | +30V, -20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 8-SOIC | |
| Serie | PowerTrench® | |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 12.5A, 10V | |
| Power Dissipation (Max) | 2.5W (Ta) | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
| Package protegéieren | Bulk |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 2659 pF @ 20 V | |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 40 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 12.5A (Ta) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor FDS4470.
| Produktiounsattriff |  |
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 |
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|---|---|---|---|---|
| Part Number | FDS4470 | FDS4488 | FDS4488 | FDS4480 |
| Hiersteller | Fairchild Semiconductor | onsemi | Fairchild Semiconductor | onsemi |
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | - | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Entworf fir Source Voltage (Vdss) | 40 V | - | 30 V | 40 V |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 12.5A, 10V | - | 22mOhm @ 7.9A, 10V | 12mOhm @ 10.8A, 10V |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | - | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) |
| Technologie | MOSFET (Metal Oxide) | - | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Mounting Type | Surface Mount | - | Surface Mount | Surface Mount |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | - | 4.5V, 10V | 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2659 pF @ 20 V | - | 927 pF @ 15 V | 1686 pF @ 20 V |
| FET Feature | - | - | - | - |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V | - | 13 nC @ 5 V | 41 nC @ 10 V |
| Serie | PowerTrench® | * | PowerTrench® | PowerTrench® |
| Supplier Device Package | 8-SOIC | - | 8-SOIC | 8-SOIC |
| FET Typ | N-Channel | - | N-Channel | N-Channel |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 12.5A (Ta) | - | 7.9A (Ta) | 10.8A (Ta) |
| Vgs (Max) | +30V, -20V | - | ±25V | +30V, -20V |
| Vgs (th) (Max) @ Id | 5V @ 250µA | - | 3V @ 250µA | 5V @ 250µA |
| Power Dissipation (Max) | 2.5W (Ta) | - | 1W (Ta) | 2.5W (Ta) |
| Package protegéieren | Bulk | Cut Tape (CT) | Bulk | Tape & Reel (TR) |
FDS4465-NLVBSEMIFDS4488onsemiMOSFET N-CH 30V 7.9A 8SOICFDS4466-NLVBSEMIFDS4480 MOSFairchild (onsemi)
FDS4465-GONsemiFDS4480-NLVBSEMIFDS4488Fairchild Semiconductor0.0079A, 30V, N-CHANNEL MOSFETFDS4480onsemiMOSFET N-CH 40V 10.8A 8SOICFDS4470-NLVBSEMIFDS4467Fairchild (onsemi)FDS4467-NLVBSEMIFDS4470 MOSFairchild (onsemi)FDS4465 MOSAMI Semiconductor/onsemiFDS4470_NLFairchild (onsemi)FDS4480_NLFairchild (onsemi)FDS4465Fairchild SemiconductorPOWER FIELD-EFFECT TRANSISTOR, 1FDS4470onsemiMOSFET N-CH 40V 12.5A 8SOICFDS4465_NLFairchild (onsemi)| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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