FDPF3860TYDTU Tech Spezifikatioune
Fairchild Semiconductor - FDPF3860TYDTU technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - FDPF3860TYDTU
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Fairchild (onsemi) | |
Vgs (th) (Max) @ Id | 4.5V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-220F-3 (Y-Forming) | |
Serie | PowerTrench® | |
Rds On (Max) @ Id, Vgs | 38.2mOhm @ 5.9A, 10V | |
Power Dissipation (Max) | 33.8W (Tc) | |
Package / Case | TO-220-3 Full Pack, Formed Leads | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 100 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 20A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor FDPF3860TYDTU.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | FDPF3860TYDTU | FDPF2710T | FDPF44N25T | FDPF44N25T |
Hiersteller | Fairchild Semiconductor | onsemi | onsemi | Fairchild Semiconductor |
Vgs (Max) | ±20V | ±30V | ±30V | ±30V |
Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V | 101 nC @ 10 V | 61 nC @ 10 V | 61 nC @ 10 V |
Serie | PowerTrench® | PowerTrench® | UniFET™ | UniFET™ |
Rds On (Max) @ Id, Vgs | 38.2mOhm @ 5.9A, 10V | 42.5mOhm @ 25A, 10V | 69mOhm @ 22A, 10V | 69mOhm @ 22A, 10V |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 20A (Tc) | 25A (Tc) | 44A (Tc) | 44A (Tc) |
Entworf fir Source Voltage (Vdss) | 100 V | 250 V | 250 V | 250 V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Package / Case | TO-220-3 Full Pack, Formed Leads | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
FET Feature | - | - | - | - |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Package protegéieren | Tube | Tube | Tube | Bulk |
Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 25 V | 7280 pF @ 25 V | 2870 pF @ 25 V | 2870 pF @ 25 V |
Vgs (th) (Max) @ Id | 4.5V @ 250µA | 5V @ 250µA | 5V @ 250µA | 5V @ 250µA |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Supplier Device Package | TO-220F-3 (Y-Forming) | TO-220F-3 | TO-220F-3 | TO-220F-3 |
Power Dissipation (Max) | 33.8W (Tc) | 62.5W (Tc) | 38W (Tc) | 38W (Tc) |
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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