FDP050AN06A0 Tech Spezifikatioune
Fairchild Semiconductor - FDP050AN06A0 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - FDP050AN06A0
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Fairchild (onsemi) | |
| Vgs (th) (Max) @ Id | 4V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-220-3 | |
| Serie | PowerTrench® | |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 80A, 10V | |
| Power Dissipation (Max) | 245W (Tc) | |
| Package / Case | TO-220-3 | |
| Package protegéieren | Bulk |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 3900 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 6V, 10V | |
| Entworf fir Source Voltage (Vdss) | 60 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 18A (Ta), 80A (Tc) |
| ATTRESSIOUN | BESCHREIWUNG |
|---|---|
| RoHs Status | |
| Fiichtegkeet Sensibilitéitsniveau (MSL) | |
| Erreecht Status | |
| ECCN | |
| HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor FDP050AN06A0.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | FDP050AN06A0 | FDP054N10 | FDP050AN06A0 | FDP047N10 |
| Hiersteller | Fairchild Semiconductor | Fairchild Semiconductor | onsemi | Fairchild Semiconductor |
| Fuert Volt (Max Rds On, Min Rds On) | 6V, 10V | 10V | 6V, 10V | 10V |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Vgs (th) (Max) @ Id | 4V @ 250µA | 4.5V @ 250µA | 4V @ 250µA | 4.5V @ 250µA |
| Power Dissipation (Max) | 245W (Tc) | 263W (Tc) | 245W (Tc) | 375W (Tc) |
| Serie | PowerTrench® | PowerTrench® | PowerTrench® | PowerTrench® |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 18A (Ta), 80A (Tc) | 120A (Tc) | 18A (Ta), 80A (Tc) | 120A (Tc) |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Input Capacitance (Ciss) (Max) @ Vds | 3900 pF @ 25 V | 13280 pF @ 25 V | 3900 pF @ 25 V | 15265 pF @ 25 V |
| Package protegéieren | Bulk | Bulk | Tube | Bulk |
| FET Feature | - | - | - | - |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 80A, 10V | 5.5mOhm @ 75A, 10V | 5mOhm @ 80A, 10V | 4.7mOhm @ 75A, 10V |
| Supplier Device Package | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| Entworf fir Source Voltage (Vdss) | 60 V | 100 V | 60 V | 100 V |
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V | 203 nC @ 10 V | 80 nC @ 10 V | 210 nC @ 10 V |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
FDP054N10Fairchild SemiconductorPOWER FIELD-EFFECT TRANSISTOR, 1FDP050AN06A0onsemiMOSFET N-CH 60V 18A/80A TO220-3FDP047N10Fairchild SemiconductorPOWER FIELD-EFFECT TRANSISTOR, 1FDP047N08 MOSFairchild (onsemi)FDP060AN08A0onsemiMOSFET N-CH 75V 16A/80A TO220-3
FDP054N10onsemiMOSFET N-CH 100V 120A TO220-3FDP047N10_NLFairchild (onsemi)FDP047N10onsemiMOSFET N-CH 100V 120A TO220-3FDP047N08VFairchild (onsemi)FDP047N10 MOSFairchild (onsemi)FDP047AN08AOFairchild (onsemi)FDP060AN08A0Fairchild SemiconductorPOWER FIELD-EFFECT TRANSISTOR, 8FDP050Fairchild (onsemi)FDP053N08B-F102onsemiMOSFET N-CH 80V 75A TO220-3FDP053N08BFairchild (onsemi)FDP050AN06AOFairchild (onsemi)FDP047N08onsemiMOSFET N-CH 75V 164A TO220-3FDP054N10 MOSFairchild (onsemi)| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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