FDN336P Tech Spezifikatioune
Fairchild Semiconductor - FDN336P technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - FDN336P
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Fairchild (onsemi) | |
Vgs (th) (Max) @ Id | 1.5V @ 250µA | |
Vgs (Max) | ±8V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | SOT-23-3 | |
Serie | PowerTrench® | |
Rds On (Max) @ Id, Vgs | 200mOhm @ 1.3A, 4.5V | |
Power Dissipation (Max) | 500mW (Ta) | |
Package / Case | TO-236-3, SC-59, SOT-23-3 | |
Package protegéieren | Bulk |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 330 pF @ 10 V | |
Gate Charge (Qg) (Max) @ Vgs | 5 nC @ 4.5 V | |
FET Typ | P-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 4.5V | |
Entworf fir Source Voltage (Vdss) | 20 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1.3A (Ta) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor FDN336P.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | FDN336P | FDN335N | FDN337N | FDN336P |
Hiersteller | Fairchild Semiconductor | onsemi | onsemi | onsemi |
Rds On (Max) @ Id, Vgs | 200mOhm @ 1.3A, 4.5V | 70mOhm @ 1.7A, 4.5V | 65mOhm @ 2.2A, 4.5V | 200mOhm @ 1.3A, 4.5V |
Package protegéieren | Bulk | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Serie | PowerTrench® | PowerTrench® | - | PowerTrench® |
Gate Charge (Qg) (Max) @ Vgs | 5 nC @ 4.5 V | 5 nC @ 4.5 V | 9 nC @ 4.5 V | 5 nC @ 4.5 V |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 4.5V | 2.5V, 4.5V | 2.5V, 4.5V | 2.5V, 4.5V |
Supplier Device Package | SOT-23-3 | SOT-23-3 | SOT-23-3 | SOT-23-3 |
Vgs (th) (Max) @ Id | 1.5V @ 250µA | 1.5V @ 250µA | 1V @ 250µA | 1.5V @ 250µA |
FET Typ | P-Channel | N-Channel | N-Channel | P-Channel |
Power Dissipation (Max) | 500mW (Ta) | 500mW (Ta) | 500mW (Ta) | 500mW (Ta) |
Input Capacitance (Ciss) (Max) @ Vds | 330 pF @ 10 V | 310 pF @ 10 V | 300 pF @ 10 V | 330 pF @ 10 V |
FET Feature | - | - | - | - |
Package / Case | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1.3A (Ta) | 1.7A (Ta) | 2.2A (Ta) | 1.3A (Ta) |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Vgs (Max) | ±8V | ±8V | ±8V | ±8V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Entworf fir Source Voltage (Vdss) | 20 V | 20 V | 30 V | 20 V |
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.