FDMS7670 Tech Spezifikatioune
Fairchild Semiconductor - FDMS7670 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - FDMS7670
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Fairchild (onsemi) | |
Vgs (th) (Max) @ Id | 3V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | 8-PQFN (5x6) | |
Serie | PowerTrench® | |
Rds On (Max) @ Id, Vgs | 3.8mOhm @ 21A, 10V | |
Power Dissipation (Max) | 2.5W (Ta), 62W (Tc) | |
Package / Case | 8-PowerTDFN | |
Package protegéieren | Bulk |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 4105 pF @ 15 V | |
Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 30 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 21A (Ta), 42A (Tc) |
ATTRESSIOUN | BESCHREIWUNG |
---|---|
RoHs Status | |
Fiichtegkeet Sensibilitéitsniveau (MSL) | |
Erreecht Status | |
ECCN | EAR99 |
HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor FDMS7670.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | FDMS7670 | FDMS7670AS | FDMS7660 | FDMS7660AS |
Hiersteller | Fairchild Semiconductor | Fairchild Semiconductor | Fairchild Semiconductor | onsemi |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
FET Feature | - | - | - | - |
Package protegéieren | Bulk | Bulk | Bulk | Tape & Reel (TR) |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Power Dissipation (Max) | 2.5W (Ta), 62W (Tc) | 2.5W (Ta), 65W (Tc) | 2.5W (Ta), 78W (Tc) | 2.5W (Ta), 83W (Tc) |
Serie | PowerTrench® | PowerTrench®, SyncFET™ | PowerTrench® | PowerTrench®, SyncFET™ |
Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 10 V | 66 nC @ 10 V | 84 nC @ 10 V | 90 nC @ 10 V |
Vgs (th) (Max) @ Id | 3V @ 250µA | 3V @ 1mA | 3V @ 250µA | 3V @ 1mA |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 3.8mOhm @ 21A, 10V | 3mOhm @ 21A, 10V | 2.8mOhm @ 25A, 10V | 2.4mOhm @ 25A, 10V |
Package / Case | 8-PowerTDFN | 8-PowerTDFN | 8-PowerTDFN | 8-PowerTDFN |
Input Capacitance (Ciss) (Max) @ Vds | 4105 pF @ 15 V | 4225 pF @ 15 V | 5565 pF @ 15 V | 6120 pF @ 15 V |
Supplier Device Package | 8-PQFN (5x6) | 8-PQFN (5x6) | 8-PQFN (5x6) | 8-PQFN (5x6) |
Entworf fir Source Voltage (Vdss) | 30 V | 30 V | 30 V | 30 V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 21A (Ta), 42A (Tc) | 22A (Ta), 42A (Tc) | 25A (Ta), 42A (Tc) | 26A (Ta), 42A (Tc) |
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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