FDMS3660S Tech Spezifikatioune
Fairchild Semiconductor - FDMS3660S technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - FDMS3660S
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Fairchild (onsemi) | |
Vgs (th) (Max) @ Id | 2.7V @ 250µA | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | 8-PQFN (5x6) | |
Serie | PowerTrench® | |
Rds On (Max) @ Id, Vgs | 8mOhm @ 13A, 10V | |
Power - Max | 1W | |
Package / Case | 8-PowerTDFN | |
Package protegéieren | Bulk |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 1765pF @ 15V | |
Gate Charge (Qg) (Max) @ Vgs | 29nC @ 10V | |
FET Feature | Logic Level Gate | |
Entworf fir Source Voltage (Vdss) | 30V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 30A, 60A | |
Konfiguratioun | 2 N-Channel (Dual) Asymmetrical | |
Basis Produktnummer | FDMS3660 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor FDMS3660S.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | FDMS3660S | FDMS3660AS | FDMS3660S | FDMS3626S |
Hiersteller | Fairchild Semiconductor | onsemi | onsemi | Fairchild Semiconductor |
Serie | PowerTrench® | PowerTrench® | PowerTrench® | PowerTrench® |
Package / Case | 8-PowerTDFN | 8-PowerTDFN | 8-PowerTDFN | 8-PowerTDFN |
Input Capacitance (Ciss) (Max) @ Vds | 1765pF @ 15V | 2230pF @ 15V | 1765pF @ 15V | 1570pF @ 13V |
Power - Max | 1W | 1W | 1W | 1W |
Entworf fir Source Voltage (Vdss) | 30V | 30V | 30V | 25V |
Package protegéieren | Bulk | Tape & Reel (TR) | Tape & Reel (TR) | Bulk |
Vgs (th) (Max) @ Id | 2.7V @ 250µA | 2.7V @ 250µA | 2.7V @ 250µA | 2V @ 250µA |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
FET Feature | Logic Level Gate | Logic Level Gate | Logic Level Gate | Logic Level Gate |
Supplier Device Package | 8-PQFN (5x6) | Power56 | Power56 | 8-PQFN (5x6) |
Rds On (Max) @ Id, Vgs | 8mOhm @ 13A, 10V | 8mOhm @ 13A, 10V | 8mOhm @ 13A, 10V | 5mOhm @ 17.5A, 10V |
Konfiguratioun | 2 N-Channel (Dual) Asymmetrical | 2 N-Channel (Dual) | 2 N-Channel (Dual) Asymmetrical | 2 N-Channel (Dual) Asymmetrical |
Gate Charge (Qg) (Max) @ Vgs | 29nC @ 10V | 30nC @ 10V | 29nC @ 10V | 26nC @ 10V |
Basis Produktnummer | FDMS3660 | FDMS3660 | FDMS3660 | FDMS3626 |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 30A, 60A | 13A, 30A | 30A, 60A | 17.5A, 25A |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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