FDMS0308CS Tech Spezifikatioune
Fairchild Semiconductor - FDMS0308CS technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - FDMS0308CS
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Fairchild (onsemi) | |
| Vgs (th) (Max) @ Id | 3V @ 1mA | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 8-PQFN (5x6) | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 3mOhm @ 21A, 10V | |
| Power Dissipation (Max) | 2.5W (Ta), 65W (Tc) | |
| Package / Case | 8-PowerTDFN | |
| Package protegéieren | Bulk |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 4225 pF @ 15 V | |
| Gate Charge (Qg) (Max) @ Vgs | 66 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Entworf fir Source Voltage (Vdss) | 30 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 22A (Ta) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor FDMS0308CS.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | FDMS0308CS | FDMS0310AS | FDMS030N06B | FDMS0306S |
| Hiersteller | Fairchild Semiconductor | onsemi | onsemi | onsemi |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | - |
| Serie | - | PowerTrench®, SyncFET™ | PowerTrench® | - |
| Package / Case | 8-PowerTDFN | 8-PowerTDFN | 8-PowerTDFN | - |
| Gate Charge (Qg) (Max) @ Vgs | 66 nC @ 10 V | 37 nC @ 10 V | 75 nC @ 10 V | - |
| Input Capacitance (Ciss) (Max) @ Vds | 4225 pF @ 15 V | 2280 pF @ 15 V | 7560 pF @ 30 V | - |
| FET Typ | N-Channel | N-Channel | N-Channel | - |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - |
| Power Dissipation (Max) | 2.5W (Ta), 65W (Tc) | 2.5W (Ta), 41W (Tc) | 2.5W (Ta), 104W (Tc) | - |
| Rds On (Max) @ Id, Vgs | 3mOhm @ 21A, 10V | 4.3mOhm @ 19A, 10V | 3mOhm @ 50A, 10V | - |
| Package protegéieren | Bulk | Tape & Reel (TR) | Tape & Reel (TR) | Bulk |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 22A (Ta) | 19A (Ta), 22A (Tc) | 22.1A (Ta), 100A (Tc) | - |
| Supplier Device Package | 8-PQFN (5x6) | 8-PQFN (5x6) | 8-PQFN (5x6) | - |
| FET Feature | - | - | - | - |
| Entworf fir Source Voltage (Vdss) | 30 V | 30 V | 60 V | - |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | - |
| Vgs (th) (Max) @ Id | 3V @ 1mA | 3V @ 1mA | 4.5V @ 250µA | - |
FDMS0310ASonsemiMOSFET N-CH 30V 19A/22A 8PQFNFDMS030N06BonsemiMOSFET N-CH 60V 22.1A/100A 8PQFN
FDMS0306AS MOSFairchild (onsemi)FDMS0306SonsemiINTEGRATED CIRCUITFDMS0306SFairchild Semiconductor1-ELEMENT, N-CHANNELFDMS0309ASonsemiMOSFET N-CH 30V 21A/49A 8PQFNFDMS0309ASFairchild SemiconductorPOWER FIELD-EFFECT TRANSISTOR, 2FDMS0308SFairchild (onsemi)FDMS0308AS MOSFairchild (onsemi)FDMS0308CSonsemiMOSFET N-CH 30V 22A 8PQFNFDMS0306ASonsemiMOSFET N-CH 30V 26A/49A 8PQFNFDMS0309AFairchild (onsemi)FDMS0308ASonsemiMOSFET N-CH 30V 24A/49A 8PQFNFDMS0309SFairchild (onsemi)FDMS0308S MOSFairchild (onsemi)FDMS0309AS MOSFairchild (onsemi)FDMS0306CSFairchild (onsemi)FDMS0308ASFairchild SemiconductorPOWER FIELD-EFFECT TRANSISTOR, 2| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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