FDMC86520L Tech Spezifikatioune
Fairchild Semiconductor - FDMC86520L technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - FDMC86520L
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Fairchild (onsemi) | |
Vgs (th) (Max) @ Id | 3V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | 8-MLP (3.3x3.3) | |
Serie | PowerTrench® | |
Rds On (Max) @ Id, Vgs | 7.9mOhm @ 13.5A, 10V | |
Power Dissipation (Max) | 2.3W (Ta), 40W (Tc) | |
Package / Case | 8-PowerWDFN | |
Package protegéieren | Bulk |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 4550 pF @ 30 V | |
Gate Charge (Qg) (Max) @ Vgs | 64 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 60 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 13.5A (Ta), 22A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor FDMC86520L.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | FDMC86520L | FDMC86320 | FDMC86340ET80 | FDMC8676 |
Hiersteller | Fairchild Semiconductor | Fairchild Semiconductor | onsemi | onsemi |
Vgs (th) (Max) @ Id | 3V @ 250µA | 4.5V @ 250µA | 4V @ 250µA | 3V @ 250µA |
FET Feature | - | - | - | - |
Package / Case | 8-PowerWDFN | 8-PowerWDFN | 8-PowerWDFN | 8-PowerTDFN |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) |
Supplier Device Package | 8-MLP (3.3x3.3) | 8-MLP (3.3x3.3) | Power33 | Power33 |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Package protegéieren | Bulk | Bulk | Tape & Reel (TR) | Bulk |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 8V, 10V | 8V, 10V | 4.5V, 10V |
Input Capacitance (Ciss) (Max) @ Vds | 4550 pF @ 30 V | 2640 pF @ 40 V | 2775 pF @ 40 V | 1935 pF @ 15 V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Power Dissipation (Max) | 2.3W (Ta), 40W (Tc) | 2.3W (Ta), 40W (Tc) | 2.8W (Ta), 65W (Tc) | 2.3W (Ta), 41W (Tc) |
Serie | PowerTrench® | PowerTrench® | PowerTrench® | PowerTrench® |
Entworf fir Source Voltage (Vdss) | 60 V | 80 V | 80 V | 30 V |
Gate Charge (Qg) (Max) @ Vgs | 64 nC @ 10 V | 41 nC @ 10 V | 49 nC @ 10 V | 30 nC @ 10 V |
Rds On (Max) @ Id, Vgs | 7.9mOhm @ 13.5A, 10V | 11.7mOhm @ 10.7A, 10V | 6.5mOhm @ 14A, 10V | 5.9mOhm @ 14.7A, 10V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 13.5A (Ta), 22A (Tc) | 10.7A (Ta), 22A (Tc) | 14A (Ta), 68A (Tc) | 16A (Ta), 18A (Tc) |
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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