FDMC6683 Tech Spezifikatioune
Fairchild Semiconductor - FDMC6683 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - FDMC6683
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Fairchild (onsemi) | |
Vgs (th) (Max) @ Id | 1V @ 250µA | |
Vgs (Max) | ±8V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | 8-MLP (3.3x3.3) | |
Serie | PowerTrench® | |
Rds On (Max) @ Id, Vgs | 8.3mOhm @ 12A, 4.5V | |
Power Dissipation (Max) | 2.3W (Ta), 41W (Tc) | |
Package / Case | 8-PowerWDFN | |
Package protegéieren | Bulk |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 7835 pF @ 10 V | |
Gate Charge (Qg) (Max) @ Vgs | 114 nC @ 4.5 V | |
FET Typ | P-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 1.8V, 5V | |
Entworf fir Source Voltage (Vdss) | 20 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 12A (Ta), 18A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor FDMC6683.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | FDMC6683 | FDMC6688P | FDMC6679AZ | FDMC6675BZ |
Hiersteller | Fairchild Semiconductor | onsemi | onsemi | onsemi |
Supplier Device Package | 8-MLP (3.3x3.3) | 8-PQFN (3.3x3.3), Power33 | 8-MLP (3.3x3.3) | 8-MLP (3.3x3.3) |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Power Dissipation (Max) | 2.3W (Ta), 41W (Tc) | 2.3W (Ta), 30W (Tc) | 2.3W (Ta), 41W (Tc) | 2.3W (Ta), 36W (Tc) |
Rds On (Max) @ Id, Vgs | 8.3mOhm @ 12A, 4.5V | 6.5mOhm @ 14A, 4.5V | 10mOhm @ 11.5A, 10V | 14.4mOhm @ 9.5A, 10V |
Vgs (Max) | ±8V | ±8V | ±25V | ±25V |
Gate Charge (Qg) (Max) @ Vgs | 114 nC @ 4.5 V | 61 nC @ 4.5 V | 91 nC @ 10 V | 65 nC @ 10 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 12A (Ta), 18A (Tc) | 14A (Ta), 56A (Tc) | 11.5A (Ta), 20A (Tc) | 9.5A (Ta), 20A (Tc) |
Package / Case | 8-PowerWDFN | 8-PowerWDFN | 8-PowerWDFN | 8-PowerWDFN |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Fuert Volt (Max Rds On, Min Rds On) | 1.8V, 5V | 1.8V, 4.5V | 4.5V, 10V | 4.5V, 10V |
Serie | PowerTrench® | PowerTrench® | PowerTrench® | PowerTrench® |
FET Typ | P-Channel | P-Channel | P-Channel | P-Channel |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Vgs (th) (Max) @ Id | 1V @ 250µA | 1V @ 250µA | 3V @ 250µA | 3V @ 250µA |
FET Feature | - | - | - | - |
Input Capacitance (Ciss) (Max) @ Vds | 7835 pF @ 10 V | 7435 pF @ 10 V | 3970 pF @ 15 V | 2865 pF @ 15 V |
Entworf fir Source Voltage (Vdss) | 20 V | 20 V | 30 V | 30 V |
Package protegéieren | Bulk | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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