FDMA410NZ Tech Spezifikatioune
Fairchild Semiconductor - FDMA410NZ technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - FDMA410NZ
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Fairchild (onsemi) | |
| Vgs (th) (Max) @ Id | 1V @ 250µA | |
| Vgs (Max) | ±8V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 6-MicroFET (2x2) | |
| Serie | PowerTrench® | |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 9.5A, 4.5V | |
| Power Dissipation (Max) | 2.4W (Ta) | |
| Package / Case | 6-WDFN Exposed Pad | |
| Package protegéieren | Bulk |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 1080 pF @ 10 V | |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 4.5 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 1.5V, 4.5V | |
| Entworf fir Source Voltage (Vdss) | 20 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 9.5A (Ta) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor FDMA410NZ.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | FDMA410NZ | FDMA410NZT | FDMA410NZT | FDMA507PZ |
| Hiersteller | Fairchild Semiconductor | onsemi | Fairchild Semiconductor | Fairchild Semiconductor |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 4.5 V | 14 nC @ 4.5 V | 14 nC @ 4.5 V | 42 nC @ 5 V |
| Supplier Device Package | 6-MicroFET (2x2) | 6-UDFN (2.05x2.05) | 6-UDFN (2.05x2.05) | 6-MicroFET (2x2) |
| Power Dissipation (Max) | 2.4W (Ta) | 2.4W (Ta) | 2.4W (Ta) | 2.4W (Ta) |
| Vgs (th) (Max) @ Id | 1V @ 250µA | 1V @ 250µA | 1V @ 250µA | 1.5V @ 250µA |
| Fuert Volt (Max Rds On, Min Rds On) | 1.5V, 4.5V | 1.5V, 4.5V | 1.5V, 4.5V | 1.8V, 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 1080 pF @ 10 V | 1310 pF @ 10 V | 1310 pF @ 10 V | 2015 pF @ 10 V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 9.5A (Ta) | 9.5A (Ta) | 9.5A (Ta) | 7.8A (Ta) |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Package / Case | 6-WDFN Exposed Pad | 6-UDFN Exposed Pad | 6-UDFN Exposed Pad | 6-WDFN Exposed Pad |
| FET Feature | - | - | - | - |
| FET Typ | N-Channel | N-Channel | N-Channel | P-Channel |
| Vgs (Max) | ±8V | ±8V | ±8V | ±8V |
| Serie | PowerTrench® | - | - | PowerTrench® |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 9.5A, 4.5V | 23mOhm @ 9.5A, 4.5V | 23mOhm @ 9.5A, 4.5V | 24mOhm @ 7.8A, 5V |
| Package protegéieren | Bulk | Tape & Reel (TR) | Bulk | Bulk |
| Entworf fir Source Voltage (Vdss) | 20 V | 20 V | 20 V | 20 V |
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FDMA410NZonsemiMOSFET N-CH 20V 9.5A 6MICROFETFDMA3028NFairchild SemiconductorSMALL SIGNAL FIELD-EFFECT TRANSIFDMA410NZ MOSFairchild (onsemi)FDMA420NZFairchild SemiconductorPOWER FIELD-EFFECT TRANSISTOR, 5FDMA3027PZFairchild SemiconductorSMALL SIGNAL FIELD-EFFECT TRANSIFDMA420NZonsemiMOSFET N-CH 20V 5.7A 6MICROFETFDMA3027PZonsemiMOSFET 2P-CH 30V 3.3A 6MICROFETFDMA507PZonsemiMOSFET P-CH 20V 7.8A 6MICROFETFDMA291P.Fairchild (onsemi)FDMA430NZonsemiMOSFET N-CH 30V 5A 6MICROFETFDMA3028NonsemiMOSFET 2N-CH 30V 3.8A 6MICROFET| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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