FDM2509NZ Tech Spezifikatioune
Fairchild Semiconductor - FDM2509NZ technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - FDM2509NZ
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Fairchild (onsemi) | |
Vgs (th) (Max) @ Id | 1.5V @ 250µA | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | MicroFET 2x2 Thin | |
Serie | PowerTrench® | |
Rds On (Max) @ Id, Vgs | 18mOhm @ 8.7A, 4.5V | |
Power - Max | 800mW | |
Package / Case | 6-UDFN Exposed Pad | |
Package protegéieren | Bulk |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 1200pF @ 10V | |
Gate Charge (Qg) (Max) @ Vgs | 17nC @ 4.5V | |
FET Feature | Logic Level Gate | |
Entworf fir Source Voltage (Vdss) | 20V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 8.7A | |
Konfiguratioun | 2 N-Channel (Dual) | |
Basis Produktnummer | FDM2509 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor FDM2509NZ.
Produktiounsattriff | ||||
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Part Number | FDM2509NZ | FDM2509NZ | FDM2452NZ | FDM3300NZ |
Hiersteller | Fairchild Semiconductor | onsemi | Fairchild Semiconductor | Fairchild Semiconductor |
Basis Produktnummer | FDM2509 | FDM2509 | FDM2452 | FDM3300 |
Entworf fir Source Voltage (Vdss) | 20V | 20V | 30V | 20V |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Serie | PowerTrench® | PowerTrench® | PowerTrench® | PowerTrench® |
Rds On (Max) @ Id, Vgs | 18mOhm @ 8.7A, 4.5V | 18mOhm @ 8.7A, 4.5V | 21mOhm @ 8.1A, 4.5V | 23mOhm @ 10A, 4.5V |
Package / Case | 6-UDFN Exposed Pad | 6-UDFN Exposed Pad | 6-WFDFN Exposed Pad | 8-PowerVDFN |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Package protegéieren | Bulk | Tape & Reel (TR) | Bulk | Bulk |
FET Feature | Logic Level Gate | Logic Level Gate | - | Logic Level Gate |
Power - Max | 800mW | 800mW | 800mW (Ta) | 900mW |
Input Capacitance (Ciss) (Max) @ Vds | 1200pF @ 10V | 1200pF @ 10V | 980pF @ 15V | 1610pF @ 10V |
Supplier Device Package | MicroFET 2x2 Thin | MicroFET 2x2 Thin | 6-MLP (2x5) | Power33 |
Gate Charge (Qg) (Max) @ Vgs | 17nC @ 4.5V | 17nC @ 4.5V | 19nC @ 4.5V | 17nC @ 4.5V |
Vgs (th) (Max) @ Id | 1.5V @ 250µA | 1.5V @ 250µA | 1.5V @ 250µA | 1.5V @ 250µA |
Konfiguratioun | 2 N-Channel (Dual) | 2 N-Channel (Dual) | 2 N-Channel (Dual) Common Drain | 2 N-Channel (Dual) |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 8.7A | 8.7A | 8.1A (Ta) | 10A |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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