FDI045N10A Tech Spezifikatioune
Fairchild Semiconductor - FDI045N10A technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - FDI045N10A
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Fairchild (onsemi) | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | I2PAK (TO-262) | |
Serie | PowerTrench® | |
Rds On (Max) @ Id, Vgs | 4.5mOhm @ 100A, 10V | |
Power Dissipation (Max) | 263W (Tc) | |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | |
Package protegéieren | Bulk |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 5270 pF @ 50 V | |
Gate Charge (Qg) (Max) @ Vgs | 74 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 100 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 120A (Tc) | |
Basis Produktnummer | FDI045 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor FDI045N10A.
Produktiounsattriff | ||||
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Part Number | FDI045N10A | FDI047AN08A0 | FDI038AN06A0 | FDI2532 |
Hiersteller | Fairchild Semiconductor | onsemi | onsemi | onsemi |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 6V, 10V | 6V, 10V | 6V, 10V |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA |
Entworf fir Source Voltage (Vdss) | 100 V | 75 V | 60 V | 150 V |
Power Dissipation (Max) | 263W (Tc) | 310W (Tc) | 310W (Tc) | 310W (Tc) |
Serie | PowerTrench® | PowerTrench® | PowerTrench® | PowerTrench® |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
FET Feature | - | - | - | - |
Supplier Device Package | I2PAK (TO-262) | I2PAK (TO-262) | I2PAK (TO-262) | I2PAK (TO-262) |
Rds On (Max) @ Id, Vgs | 4.5mOhm @ 100A, 10V | 4.7mOhm @ 80A, 10V | 3.8mOhm @ 80A, 10V | 16mOhm @ 33A, 10V |
Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
Basis Produktnummer | FDI045 | FDI047 | FDI038 | FDI2532 |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 120A (Tc) | 80A (Tc) | 17A (Ta), 80A (Tc) | 8A (Ta), 79A (Tc) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Input Capacitance (Ciss) (Max) @ Vds | 5270 pF @ 50 V | 6600 pF @ 25 V | 6400 pF @ 25 V | 5870 pF @ 25 V |
Gate Charge (Qg) (Max) @ Vgs | 74 nC @ 10 V | 138 nC @ 10 V | 124 nC @ 10 V | 107 nC @ 10 V |
Package protegéieren | Bulk | Tube | Tube | Tube |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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