FDH047AN08A0 Tech Spezifikatioune
Fairchild Semiconductor - FDH047AN08A0 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - FDH047AN08A0
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Fairchild (onsemi) | |
| Vgs (th) (Max) @ Id | 4V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-247 | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 4.7mOhm @ 80A, 10V | |
| Power Dissipation (Max) | 310W (Tc) | |
| Package / Case | TO-247-3 | |
| Package protegéieren | Bulk |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 6600 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 138 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 6V, 10V | |
| Entworf fir Source Voltage (Vdss) | 75 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 15A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor FDH047AN08A0.
| Produktiounsattriff |  |
 |
 |
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|---|---|---|---|---|
| Part Number | FDH047AN08A0 | FDH038AN08A1 | FDH210N08 | FDH038AN08A1 |
| Hiersteller | Fairchild Semiconductor | onsemi | Fairchild Semiconductor | Fairchild Semiconductor |
| Package protegéieren | Bulk | Tube | Bulk | Bulk |
| FET Feature | - | - | - | - |
| Rds On (Max) @ Id, Vgs | 4.7mOhm @ 80A, 10V | 3.8mOhm @ 80A, 10V | - | 3.8mOhm @ 80A, 10V |
| Serie | - | PowerTrench® | - | PowerTrench® |
| Supplier Device Package | TO-247 | TO-247-3 | TO-247 | TO-247 |
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Entworf fir Source Voltage (Vdss) | 75 V | 75 V | 75 V | 75 V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 15A (Tc) | 22A (Ta), 80A (Tc) | - | 22A (Ta), 80A (Tc) |
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max) | 310W (Tc) | 450W (Tc) | 462W (Tc) | 450W (Tc) |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Gate Charge (Qg) (Max) @ Vgs | 138 nC @ 10 V | 160 nC @ 10 V | - | 160 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 6600 pF @ 25 V | 8665 pF @ 25 V | - | 8665 pF @ 25 V |
| Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | - | 4V @ 250µA |
| Fuert Volt (Max Rds On, Min Rds On) | 6V, 10V | 6V, 10V | 10V | 6V, 10V |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
FDH2N60FEIHONGFDH038AN08A1onsemiMOSFET N-CH 75V 22A/80A TO247-3FDH055N15AEFairchild (onsemi)
FDH300onsemiDIODE GEN PURP 125V 200MA DO35FDH055N15A MOSFairchild (onsemi)FDH210N08Fairchild SemiconductorMOSFET N-CH 75V TO247-3FDH038AN08A1Fairchild SemiconductorMOSFET N-CH 75V 22A/80A TO247-3FDH038AN08A1 MOSFairchild (onsemi)
FDH1040B-R14MP3Murata ElectronicsFDH055N15AFairchild SemiconductorPOWER FIELD-EFFECT TRANSISTOR, 1FDH27N50onsemiMOSFET N-CH 500V 27A TO247-3FDH-4233FDHFDH055N15AonsemiMOSFET N-CH 150V 158A TO247-3FDH047AN08A0onsemiMOSFET N-CH 75V 15A TO247-3FDH15N50onsemiMOSFET N-CH 500V 15A TO247-3FDH047AN08AOFairchild (onsemi)FDH300ATRonsemiDIODE GEN PURP 125V 200MA DO35FDH210N08onsemiMOSFET N-CH 75V TO247-3| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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