FDD6676S Tech Spezifikatioune
Fairchild Semiconductor - FDD6676S technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - FDD6676S
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Fairchild (onsemi) | |
| Vgs (th) (Max) @ Id | 3V @ 1mA | |
| Vgs (Max) | ±16V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-252, (D-Pak) | |
| Serie | PowerTrench® | |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 16A, 10V | |
| Power Dissipation (Max) | 1.3W (Ta) | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Package protegéieren | Bulk |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 4770 pF @ 15 V | |
| Gate Charge (Qg) (Max) @ Vgs | 58 nC @ 5 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Entworf fir Source Voltage (Vdss) | 30 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 78A (Ta) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor FDD6676S.
| Produktiounsattriff |  |
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 |
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|---|---|---|---|---|
| Part Number | FDD6676S | FDD6676AS | FDD6676AS | FDD6680A |
| Hiersteller | Fairchild Semiconductor | onsemi | Fairchild Semiconductor | Fairchild Semiconductor |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 78A (Ta) | 90A (Ta) | 90A (Ta) | 14A (Ta), 56A (Tc) |
| Vgs (th) (Max) @ Id | 3V @ 1mA | 3V @ 1mA | 3V @ 1mA | 3V @ 250µA |
| Input Capacitance (Ciss) (Max) @ Vds | 4770 pF @ 15 V | 2500 pF @ 15 V | 2500 pF @ 15 V | 1425 pF @ 15 V |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Gate Charge (Qg) (Max) @ Vgs | 58 nC @ 5 V | 64 nC @ 10 V | 64 nC @ 10 V | 20 nC @ 5 V |
| Vgs (Max) | ±16V | ±20V | ±20V | ±20V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Package protegéieren | Bulk | Tape & Reel (TR) | Bulk | Bulk |
| Supplier Device Package | TO-252, (D-Pak) | TO-252AA | TO-252, (D-Pak) | TO-252, (D-Pak) |
| Entworf fir Source Voltage (Vdss) | 30 V | 30 V | 30 V | 30 V |
| FET Feature | - | - | - | - |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
| Serie | PowerTrench® | PowerTrench® | PowerTrench® | PowerTrench® |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Power Dissipation (Max) | 1.3W (Ta) | 70W (Ta) | 70W (Ta) | 2.8W (Ta), 60W (Tc) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 16A, 10V | 5.7mOhm @ 16A, 10V | 5.7mOhm @ 16A, 10V | 9.5mOhm @ 14A, 10V |
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FDD6680AonsemiMOSFET N-CH 30V 14A/56A DPAKFDD6672AFairchild SemiconductorMOSFET N-CH 30V 65A TO252FDD6680onsemiMOSFET N-CH 30V 12A/46A DPAKFDD6680Fairchild SemiconductorMOSFET N-CH 30V 12A/46A DPAKFDD6676 MOSFairchild (onsemi)FDD6676AS MOSFairchild (onsemi)FDD6676Fairchild SemiconductorN-CHANNEL POWER MOSFETFDD6679AZFairchild (onsemi)FDD6672AonsemiMOSFET N-CH 30V 65A TO252| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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