FDD6670S Tech Spezifikatioune
Fairchild Semiconductor - FDD6670S technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - FDD6670S
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Fairchild (onsemi) | |
Vgs (th) (Max) @ Id | 3V @ 1mA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-252, (D-Pak) | |
Serie | PowerTrench® | |
Rds On (Max) @ Id, Vgs | 9mOhm @ 13.8A, 10V | |
Power Dissipation (Max) | 1.3W (Ta) | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
Package protegéieren | Bulk |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 2010 pF @ 15 V | |
Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 30 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 64A (Ta) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor FDD6670S.
Produktiounsattriff | ||||
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Part Number | FDD6670S | FDD6672A | FDD6672A | FDD6670AS |
Hiersteller | Fairchild Semiconductor | Fairchild Semiconductor | onsemi | Fairchild Semiconductor |
Input Capacitance (Ciss) (Max) @ Vds | 2010 pF @ 15 V | 5070 pF @ 15 V | 5070 pF @ 15 V | 1580 pF @ 15 V |
Power Dissipation (Max) | 1.3W (Ta) | 3.2W (Ta), 70W (Tc) | 3.2W (Ta), 70W (Tc) | 70W (Ta) |
Supplier Device Package | TO-252, (D-Pak) | TO-252, (D-Pak) | TO-252AA | TO-252, (D-Pak) |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Package protegéieren | Bulk | Bulk | Tape & Reel (TR) | Bulk |
Rds On (Max) @ Id, Vgs | 9mOhm @ 13.8A, 10V | 8mOhm @ 14A, 10V | 8mOhm @ 14A, 10V | 8mOhm @ 13.8A, 10V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
Vgs (th) (Max) @ Id | 3V @ 1mA | 2V @ 250µA | 2V @ 250µA | 3V @ 1mA |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Entworf fir Source Voltage (Vdss) | 30 V | 30 V | 30 V | 30 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 64A (Ta) | 65A (Ta) | 65A (Ta) | 76A (Ta) |
FET Feature | - | - | - | - |
Operatioun Temperatur | -55°C ~ 150°C | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Vgs (Max) | ±20V | ±12V | ±12V | ±20V |
Serie | PowerTrench® | PowerTrench® | PowerTrench® | PowerTrench® |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V | 46 nC @ 4.5 V | 46 nC @ 4.5 V | 40 nC @ 10 V |
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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