FDD2512 Tech Spezifikatioune
Fairchild Semiconductor - FDD2512 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - FDD2512
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Fairchild (onsemi) | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-252, (D-Pak) | |
Serie | PowerTrench® | |
Rds On (Max) @ Id, Vgs | 420mOhm @ 2.2A, 10V | |
Power Dissipation (Max) | 42W (Ta) | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
Package protegéieren | Bulk |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 344 pF @ 75 V | |
Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 6V, 10V | |
Entworf fir Source Voltage (Vdss) | 150 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6.7A (Ta) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor FDD2512.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | FDD2512 | FDD2512 | FDD24AN06LA0 | FDD2572 |
Hiersteller | Fairchild Semiconductor | onsemi | Fairchild Semiconductor | Fairchild Semiconductor |
Supplier Device Package | TO-252, (D-Pak) | TO-252AA | TO-252, (D-Pak) | TO-252, (D-Pak) |
Power Dissipation (Max) | 42W (Ta) | 42W (Ta) | 75W (Tc) | 135W (Tc) |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Fuert Volt (Max Rds On, Min Rds On) | 6V, 10V | 6V, 10V | 5V, 10V | 6V, 10V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6.7A (Ta) | 6.7A (Ta) | 7.1A (Ta), 40A (Tc) | 4A (Ta), 29A (Tc) |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Entworf fir Source Voltage (Vdss) | 150 V | 150 V | 60 V | 150 V |
Rds On (Max) @ Id, Vgs | 420mOhm @ 2.2A, 10V | 420mOhm @ 2.2A, 10V | 19mOhm @ 40A, 10V | 54mOhm @ 9A, 10V |
Input Capacitance (Ciss) (Max) @ Vds | 344 pF @ 75 V | 344 pF @ 75 V | 1850 pF @ 25 V | 1770 pF @ 25 V |
Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 2V @ 250µA | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V | 11 nC @ 10 V | 21 nC @ 5 V | 34 nC @ 10 V |
Serie | PowerTrench® | PowerTrench® | PowerTrench® | PowerTrench® |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
FET Feature | - | - | - | - |
Package protegéieren | Bulk | Tape & Reel (TR) | Bulk | Bulk |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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