FDB6021P Tech Spezifikatioune
Fairchild Semiconductor - FDB6021P technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - FDB6021P
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Fairchild (onsemi) | |
| Vgs (th) (Max) @ Id | 1.5V @ 250µA | |
| Vgs (Max) | ±8V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | D2PAK (TO-263) | |
| Serie | PowerTrench® | |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 14A, 4.5V | |
| Power Dissipation (Max) | 37W (Tc) | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| Package protegéieren | Bulk |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -65°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 1890 pF @ 10 V | |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 4.5 V | |
| FET Typ | P-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 1.8V, 4.5V | |
| Entworf fir Source Voltage (Vdss) | 20 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 28A (Ta) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor FDB6021P.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | FDB6021P | FDB5690 | FDB5690 | FDB6030BL |
| Hiersteller | Fairchild Semiconductor | onsemi | Fairchild Semiconductor | Fairchild Semiconductor |
| Operatioun Temperatur | -65°C ~ 175°C (TJ) | -65°C ~ 175°C (TJ) | -65°C ~ 175°C (TJ) | -65°C ~ 175°C (TJ) |
| Input Capacitance (Ciss) (Max) @ Vds | 1890 pF @ 10 V | 1120 pF @ 25 V | 1120 pF @ 25 V | 1160 pF @ 15 V |
| Power Dissipation (Max) | 37W (Tc) | 58W (Tc) | 58W (Tc) | 60W (Tc) |
| FET Typ | P-Channel | N-Channel | N-Channel | N-Channel |
| Vgs (th) (Max) @ Id | 1.5V @ 250µA | 4V @ 250µA | 4V @ 250µA | 3V @ 250µA |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 28A (Ta) | 32A (Tc) | 32A (Tc) | 40A (Tc) |
| Serie | PowerTrench® | PowerTrench® | PowerTrench® | PowerTrench® |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 14A, 4.5V | 27mOhm @ 16A, 10V | 27mOhm @ 16A, 10V | 18mOhm @ 20A, 10V |
| Entworf fir Source Voltage (Vdss) | 20 V | 60 V | 60 V | 30 V |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package | D2PAK (TO-263) | D²PAK (TO-263) | D2PAK (TO-263) | D2PAK (TO-263) |
| Vgs (Max) | ±8V | ±20V | ±20V | ±20V |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 4.5 V | 33 nC @ 10 V | 33 nC @ 10 V | 17 nC @ 5 V |
| Fuert Volt (Max Rds On, Min Rds On) | 1.8V, 4.5V | 6V, 10V | 6V, 10V | 4.5V, 10V |
| FET Feature | - | - | - | - |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Package protegéieren | Bulk | Tape & Reel (TR) | Bulk | Bulk |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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