FDB2670 Tech Spezifikatioune
Fairchild Semiconductor - FDB2670 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - FDB2670
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Fairchild (onsemi) | |
Vgs (th) (Max) @ Id | 4.5V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | D2PAK (TO-263) | |
Serie | PowerTrench® | |
Rds On (Max) @ Id, Vgs | 130mOhm @ 10A, 10V | |
Power Dissipation (Max) | 93W (Tc) | |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
Package protegéieren | Bulk |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -65°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 1320 pF @ 100 V | |
Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 200 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 19A (Ta) |
ATTRESSIOUN | BESCHREIWUNG |
---|---|
RoHs Status | |
Fiichtegkeet Sensibilitéitsniveau (MSL) | |
Erreecht Status | |
ECCN | EAR99 |
HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor FDB2670.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | FDB2670 | FDB2670 | FDB28N30TM | FDB2572 |
Hiersteller | Fairchild Semiconductor | onsemi | Fairchild Semiconductor | Fairchild Semiconductor |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Entworf fir Source Voltage (Vdss) | 200 V | 200 V | 300 V | 150 V |
Operatioun Temperatur | -65°C ~ 175°C (TJ) | -65°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Vgs (Max) | ±20V | ±20V | ±30V | ±20V |
Rds On (Max) @ Id, Vgs | 130mOhm @ 10A, 10V | 130mOhm @ 10A, 10V | 129mOhm @ 14A, 10V | 54mOhm @ 9A, 10V |
FET Feature | - | - | - | - |
Power Dissipation (Max) | 93W (Tc) | 93W (Tc) | 250W (Tc) | 135W (Tc) |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 19A (Ta) | 19A (Ta) | 28A (Tc) | 4A (Ta), 29A (Tc) |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 6V, 10V |
Package protegéieren | Bulk | Tape & Reel (TR) | Bulk | Bulk |
Supplier Device Package | D2PAK (TO-263) | D²PAK (TO-263) | D2PAK (TO-263) | D2PAK (TO-263) |
Input Capacitance (Ciss) (Max) @ Vds | 1320 pF @ 100 V | 1320 pF @ 100 V | 2250 pF @ 25 V | 1770 pF @ 25 V |
Vgs (th) (Max) @ Id | 4.5V @ 250µA | 4.5V @ 250µA | 5V @ 250µA | 4V @ 250µA |
Serie | PowerTrench® | PowerTrench® | UniFET™ | - |
Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V | 38 nC @ 10 V | 50 nC @ 10 V | 34 nC @ 10 V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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