FCPF2250N80Z Tech Spezifikatioune
Fairchild Semiconductor - FCPF2250N80Z technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - FCPF2250N80Z
Produktiounsattriff | Attributer Wäert | |
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Hiersteller | Fairchild (onsemi) | |
Vgs (th) (Max) @ Id | 4.5V @ 260µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-220F-3 | |
Serie | SuperFET® II | |
Rds On (Max) @ Id, Vgs | 2.25Ohm @ 1.3A, 10V | |
Power Dissipation (Max) | 21.9W (Tc) | |
Package / Case | TO-220-3 Full Pack | |
Package protegéieren | Bulk |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 585 pF @ 100 V | |
Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 800 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2.6A (Tc) |
ATTRESSIOUN | BESCHREIWUNG |
---|---|
RoHs Status | |
Fiichtegkeet Sensibilitéitsniveau (MSL) | |
Erreecht Status | |
ECCN | EAR99 |
HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor FCPF2250N80Z.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | FCPF2250N80Z | FCPF20N60FS | FCPF250N65S3R0L | FCPF220N80 |
Hiersteller | Fairchild Semiconductor | onsemi | onsemi | Fairchild Semiconductor |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2.6A (Tc) | 20A (Tc) | 12A (Tc) | 23A (Tc) |
Vgs (Max) | ±20V | ±30V | ±30V | ±20V |
Package / Case | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack |
Vgs (th) (Max) @ Id | 4.5V @ 260µA | 5V @ 250µA | 4.5V @ 1.2mA | 4.5V @ 2.3mA |
Package protegéieren | Bulk | Tube | Tube | Bulk |
Power Dissipation (Max) | 21.9W (Tc) | 39W (Tc) | 31W (Tc) | 44W (Tc) |
FET Feature | - | - | - | - |
Input Capacitance (Ciss) (Max) @ Vds | 585 pF @ 100 V | 3080 pF @ 25 V | 1010 pF @ 400 V | 4560 pF @ 100 V |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Entworf fir Source Voltage (Vdss) | 800 V | 600 V | 650 V | 800 V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Supplier Device Package | TO-220F-3 | TO-220F-3 | TO-220F-3 | TO-220F |
Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V | 98 nC @ 10 V | 24 nC @ 10 V | 105 nC @ 10 V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Serie | SuperFET® II | SuperFET™ | SuperFET® III | SuperFET® II |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Rds On (Max) @ Id, Vgs | 2.25Ohm @ 1.3A, 10V | 190mOhm @ 10A, 10V | 250mOhm @ 6A, 10V | 220mOhm @ 11.5A, 10V |
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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