FCPF165N65S3R0L Tech Spezifikatioune
Fairchild Semiconductor - FCPF165N65S3R0L technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - FCPF165N65S3R0L
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Fairchild (onsemi) | |
Vgs (th) (Max) @ Id | 4.5V @ 410µA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-220F-3 | |
Serie | SuperFET® III | |
Rds On (Max) @ Id, Vgs | 165mOhm @ 9.5A, 10V | |
Power Dissipation (Max) | 35W (Tc) | |
Package / Case | TO-220-3 Full Pack | |
Package protegéieren | Bulk |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 1415 pF @ 400 V | |
Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 650 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 19A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor FCPF165N65S3R0L.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | FCPF165N65S3R0L | FCPF190N60E | FCPF13N60NT | FCPF16N60NT |
Hiersteller | Fairchild Semiconductor | onsemi | Fairchild Semiconductor | Fairchild Semiconductor |
Entworf fir Source Voltage (Vdss) | 650 V | 600 V | 600 V | 600 V |
Package / Case | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Vgs (th) (Max) @ Id | 4.5V @ 410µA | 3.5V @ 250µA | 4V @ 250µA | 4V @ 250µA |
Vgs (Max) | ±30V | ±20V | ±30V | ±30V |
FET Feature | - | - | - | - |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 19A (Tc) | 20.6A (Tc) | 13A (Tc) | 16A (Tc) |
Input Capacitance (Ciss) (Max) @ Vds | 1415 pF @ 400 V | 3175 pF @ 25 V | 1765 pF @ 100 V | 2170 pF @ 100 V |
Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V | 82 nC @ 10 V | 39.5 nC @ 10 V | 52.3 nC @ 10 V |
Package protegéieren | Bulk | Tube | Bulk | Bulk |
Supplier Device Package | TO-220F-3 | TO-220F-3 | TO-220F-3 | TO-220F-3 |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Serie | SuperFET® III | SuperFET® II | SuperMOS™ | SupreMOS™ |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Power Dissipation (Max) | 35W (Tc) | 39W (Tc) | 33.8W (Tc) | 35.7W (Tc) |
Rds On (Max) @ Id, Vgs | 165mOhm @ 9.5A, 10V | 190mOhm @ 10A, 10V | 258mOhm @ 6.5A, 10V | 199mOhm @ 8A, 10V |
Eroflueden FCPF165N65S3R0L PDF DataDhusts an Fairchild Semiconductor Dokumentatioun fir FCPF165N65S3R0L - Fairchild Semiconductor.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
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Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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