FCP21N60N Tech Spezifikatioune
Fairchild Semiconductor - FCP21N60N technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - FCP21N60N
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Fairchild (onsemi) | |
| Vgs (th) (Max) @ Id | - | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-220-3 | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | - | |
| Power Dissipation (Max) | - | |
| Package / Case | TO-220-3 |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Tube | |
| Operatioun Temperatur | - | |
| Mounting Type | Through Hole | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Entworf fir Source Voltage (Vdss) | 600 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | - | |
| Basis Produktnummer | FCP21 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor FCP21N60N.
| Produktiounsattriff |  |
 |
 |
 |
|---|---|---|---|---|
| Part Number | FCP21N60N | FCP21N60N | FCP25N60N | FCP190N65S3 |
| Hiersteller | Fairchild Semiconductor | onsemi | Fairchild Semiconductor | onsemi |
| Operatioun Temperatur | - | - | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | - | - | 125mOhm @ 12.5A, 10V | 190mOhm @ 8.5A, 10V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Entworf fir Source Voltage (Vdss) | 600 V | 600 V | 600 V | 650 V |
| Serie | - | - | SupreMOS™ | SuperFET® III |
| Power Dissipation (Max) | - | - | 216W (Tc) | 144W (Tc) |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| Basis Produktnummer | FCP21 | - | FCP25 | FCP190 |
| FET Feature | - | - | - | - |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | - | - | 25A (Tc) | 17A (Tc) |
| Package protegéieren | Tube | Bulk | Bulk | Tube |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Supplier Device Package | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Vgs (th) (Max) @ Id | - | - | 4V @ 250µA | 4.5V @ 1.7mA |
FCP22N60N MOSFairchild (onsemi)FCP21N60NonsemiFCP21N60 - N-CHANNEL, MOSFETFCP22N60FAIRCHI
FCP1913H104J-E2Cornell Dubilier Electronics (CDE)CAP FILM 0.1UF 5% 50VDC 1913FCP25N60NFairchild SemiconductorMOSFET N-CH 600V TO-220-3FCP20N60 MOSFairchild (onsemi)FCP190N65S3onsemiMOSFET N-CH 650V 17A TO220-3FCP190N65FFairchild SemiconductorPOWER FIELD-EFFECT TRANSISTOR, 2FCP260N60EonsemiMOSFET N-CH 600V 15A TO220-3FCP220N80onsemiMOSFET N-CH 800V 23A TO220-3FCP20N60onsemiMOSFET N-CH 600V 20A TO220-3FCP190N65FonsemiMOSFET N-CH 650V 20.6A TO220-3FCP22N60NFairchild SemiconductorPOWER FIELD-EFFECT TRANSISTOR, 2FCP1913H683J-E1Cornell Dubilier Electronics (CDE)CAP FILM 0.068UF 5% 50VDC 1913FCP190N60_GF102Fairchild (onsemi)FCP22N60NonsemiMOSFET N-CH 600V 22A TO220-3
FCP2416H224J-D5Cornell Dubilier Electronics (CDE)CAP FILM 0.22UF 5% 50VDC 2416FCP25N60NonsemiMOSFET N-CH 600V 25A TO220-3| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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