FCP16N60N Tech Spezifikatioune
Fairchild Semiconductor - FCP16N60N technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - FCP16N60N
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Fairchild (onsemi) | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-220-3 | |
Serie | SupreMOS™ | |
Rds On (Max) @ Id, Vgs | 199mOhm @ 8A, 10V | |
Power Dissipation (Max) | 134.4W (Tc) | |
Package / Case | TO-220-3 | |
Package protegéieren | Bulk |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 2170 pF @ 100 V | |
Gate Charge (Qg) (Max) @ Vgs | 52.3 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 600 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 16A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor FCP16N60N.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | FCP16N60N | FCP16N60N | FCP190N60-GF102 | FCP165N65S3R0 |
Hiersteller | Fairchild Semiconductor | onsemi | onsemi | Fairchild Semiconductor |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 16A (Tc) | 16A (Tc) | 20.2A (Tc) | 19A (Tc) |
Power Dissipation (Max) | 134.4W (Tc) | 134.4W (Tc) | 208W (Tc) | 154W (Tc) |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Serie | SupreMOS™ | SupreMOS™ | SuperFET® II | SuperFET® III |
Supplier Device Package | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
FET Feature | - | - | - | - |
Gate Charge (Qg) (Max) @ Vgs | 52.3 nC @ 10 V | 52.3 nC @ 10 V | 74 nC @ 10 V | 39 nC @ 10 V |
Entworf fir Source Voltage (Vdss) | 600 V | 600 V | 600 V | 650 V |
Package protegéieren | Bulk | Tube | Tube | Bulk |
Vgs (Max) | ±30V | ±30V | ±20V | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 2170 pF @ 100 V | 2170 pF @ 100 V | 2950 pF @ 25 V | 1500 pF @ 400 V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Rds On (Max) @ Id, Vgs | 199mOhm @ 8A, 10V | 199mOhm @ 8A, 10V | 199mOhm @ 10A, 10V | 165mOhm @ 9.5A, 10V |
Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 3.5V @ 250µA | 4.5V @ 440mA |
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.