FCP099N60E Tech Spezifikatioune
Fairchild Semiconductor - FCP099N60E technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - FCP099N60E
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Fairchild (onsemi) | |
| Vgs (th) (Max) @ Id | 3.5V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-220-3 | |
| Serie | SuperFET® II | |
| Rds On (Max) @ Id, Vgs | 99mOhm @ 18.5A, 10V | |
| Power Dissipation (Max) | 357W (Tc) | |
| Package / Case | TO-220-3 | |
| Package protegéieren | Bulk |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 3465 pF @ 380 V | |
| Gate Charge (Qg) (Max) @ Vgs | 114 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 600 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 37A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor FCP099N60E.
| Produktiounsattriff |  |
 |
|
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|---|---|---|---|---|
| Part Number | FCP099N60E | FCP11N60 | FCP104N60F | FCP11N60 |
| Hiersteller | Fairchild Semiconductor | onsemi | onsemi | Fairchild Semiconductor |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Vgs (Max) | ±20V | ±30V | ±20V | ±30V |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| Rds On (Max) @ Id, Vgs | 99mOhm @ 18.5A, 10V | 380mOhm @ 5.5A, 10V | 104mOhm @ 18.5A, 10V | 380mOhm @ 5.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 114 nC @ 10 V | 52 nC @ 10 V | 145 nC @ 10 V | 52 nC @ 10 V |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 37A (Tc) | 11A (Tc) | 37A (Tc) | 11A (Tc) |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Entworf fir Source Voltage (Vdss) | 600 V | 600 V | 600 V | 600 V |
| FET Feature | - | - | - | - |
| Serie | SuperFET® II | SuperFET™ | HiPerFET™, Polar™ | SuperFET™ |
| Supplier Device Package | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 3465 pF @ 380 V | 1490 pF @ 25 V | 6130 pF @ 25 V | 1490 pF @ 25 V |
| Package protegéieren | Bulk | Tube | Tube | Bulk |
| Vgs (th) (Max) @ Id | 3.5V @ 250µA | 5V @ 250µA | 5V @ 250µA | 5V @ 250µA |
| Power Dissipation (Max) | 357W (Tc) | 125W (Tc) | 357W (Tc) | 125W (Tc) |
FCP11N60F MOSFairchild (onsemi)
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FCP1206H103J-H2Cornell Dubilier Electronics (CDE)CAP FILM 10000PF 5% 50VDC 1206FCP104N60Fairchild SemiconductorPOWER FIELD-EFFECT TRANSISTOR, 3FCP11N60 MOSFairchild (onsemi)FCP099N65S3onsemiMOSFET N-CH 650V 30A TO220-3FCP067N65S3onsemiMOSFET N-CH 650V 44A TO220FCP104N60onsemiMOSFET N-CH 600V 37A TO220-3FCP11N60FonsemiMOSFET N-CH 600V 11A TO220-3FCP-102TDK CorporationIGBT ModuleFCP099N60EonsemiMOSFET N-CH 600V 37A TO220-3FCP11N60N MOSFairchild (onsemi)| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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