FCH110N65F-F155 Tech Spezifikatioune
Fairchild Semiconductor - FCH110N65F-F155 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - FCH110N65F-F155
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Fairchild (onsemi) | |
| Vgs (th) (Max) @ Id | 5V @ 3.5mA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-247-3 | |
| Serie | FRFET®, SuperFET® II | |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 17.5A, 10V | |
| Power Dissipation (Max) | 357W (Tc) | |
| Package / Case | TO-247-3 | |
| Package protegéieren | Bulk |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 4895 pF @ 100 V | |
| Gate Charge (Qg) (Max) @ Vgs | 145 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 650 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 35A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor FCH110N65F-F155.
| Produktiounsattriff |  |
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 |
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|---|---|---|---|---|
| Part Number | FCH110N65F-F155 | FCH150N65F-F155 | FCH125N60E | FCH125N60E |
| Hiersteller | Fairchild Semiconductor | Fairchild Semiconductor | onsemi | Fairchild Semiconductor |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 4895 pF @ 100 V | 3737 pF @ 100 V | 2990 pF @ 380 V | 2990 pF @ 380 V |
| Vgs (th) (Max) @ Id | 5V @ 3.5mA | 5V @ 2.4mA | 3.5V @ 250µA | 3.5V @ 250µA |
| Serie | FRFET®, SuperFET® II | SuperFET® II | SuperFET® II | SuperFET® II |
| Power Dissipation (Max) | 357W (Tc) | 298W (Tc) | 278W (Tc) | 278W (Tc) |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Package protegéieren | Bulk | Bulk | Tube | Bulk |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 17.5A, 10V | 150mOhm @ 12A, 10V | 125mOhm @ 14.5A, 10V | 125mOhm @ 14.5A, 10V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Supplier Device Package | TO-247-3 | TO-247 Long Leads | TO-247-3 | TO-247 |
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Gate Charge (Qg) (Max) @ Vgs | 145 nC @ 10 V | 94 nC @ 10 V | 95 nC @ 10 V | 95 nC @ 10 V |
| FET Feature | - | - | - | - |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Entworf fir Source Voltage (Vdss) | 650 V | 650 V | 600 V | 600 V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 35A (Tc) | 24A (Tc) | 29A (Tc) | 29A (Tc) |
FCH111SiemensFCH10AU10NIECFCH125N65S3R0-F155ONsemiFCH150N65F-F155Fairchild SemiconductorPOWER FIELD-EFFECT TRANSISTOR, NFCH110N65FFairchild (onsemi)FCH10U10NIECFCH125N60EonsemiMOSFET N-CH 600V 29A TO247-3FCH150N65FFairchild (onsemi)FCH125N60EFairchild SemiconductorMOSFET N-CH 600V 29A TO247-3FCH10A06NIECFCH10U15NIEC
FCH10A20KYOCERA AVXDIODE SCHOT 200V 10A TO220 FFCH130N60onsemiMOSFET N-CH 600V 28A TO247-3FCH10A10NIECFCH130N60Fairchild SemiconductorMOSFET N-CH 600V 28A TO247-3FCH110N65F-F155onsemiMOSFET N-CH 650V 35A TO247FCH10A15KYOCERA AVXDIODE SCHOT 150V 10A TO220 FFCH10A40NIEC| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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