2N6517CTA Tech Spezifikatioune
Fairchild Semiconductor - 2N6517CTA technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - 2N6517CTA
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Fairchild (onsemi) | |
| Voltage - Collector Emitter Breakdown (Max) | 400 V | |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 5mA, 50mA | |
| Transistor Type | NPN | |
| Supplier Device Package | TO-92-3 | |
| Serie | - | |
| Power - Max | 625 mW | |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Bulk | |
| Operatioun Temperatur | 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Frequenz - Iwwergang | 200MHz | |
| DC Aktuelle Verstärker (hFE) (Min) @ Ic, Vce | 20 @ 50mA, 10V | |
| Aktuell - Kollektorat Cutoff (Max) | 50nA (ICBO) | |
| Aktuell - Sammler (Ic) (Max) | 500 mA |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor 2N6517CTA.
| Produktiounsattriff |  |
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 |
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|---|---|---|---|---|
| Part Number | 2N6517CTA | 2N6520TA | 2N6517CTA | 2N6515 |
| Hiersteller | Fairchild Semiconductor | Fairchild Semiconductor | onsemi | onsemi |
| Frequenz - Iwwergang | 200MHz | 200MHz | 200MHz | 200MHz |
| Supplier Device Package | TO-92-3 | TO-92-3 | TO-92-3 | TO-92 (TO-226) |
| Package protegéieren | Bulk | Bulk | Cut Tape (CT) | Bulk |
| DC Aktuelle Verstärker (hFE) (Min) @ Ic, Vce | 20 @ 50mA, 10V | 20 @ 50mA, 10V | 20 @ 50mA, 10V | 45 @ 50mA, 10V |
| Aktuell - Kollektorat Cutoff (Max) | 50nA (ICBO) | 50nA (ICBO) | 50nA (ICBO) | 50nA (ICBO) |
| Power - Max | 625 mW | 625 mW | 625 mW | 625 mW |
| Serie | - | - | - | - |
| Aktuell - Sammler (Ic) (Max) | 500 mA | 500 mA | 500 mA | 500 mA |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 5mA, 50mA | 1V @ 5mA, 50mA | 1V @ 5mA, 50mA | 1V @ 5mA, 50mA |
| Transistor Type | NPN | PNP | NPN | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 400 V | 350 V | 400 V | 250 V |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | TO-226-3, TO-92-3 Long Body |
| Operatioun Temperatur | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) | -55°C ~ 150°C (TJ) |
2N6520TAFairchild SemiconductorTRANS PNP 350V 0.5A TO92-3
2N6509GLittelfuse Inc.SCR 800V 25A TO220AB2N6517CTAonsemiTRANS NPN 400V 0.5A TO92-32N6515onsemiTRANS NPN 250V 0.5A TO92
2N6513Microchip TechnologyPOWER BJT2N6520RLRAGonsemiTRANS PNP 350V 0.5A TO92
2N6520Central SemiconductorTHROUGH-HOLE TRANSISTOR-SMALL SI2N6517BUonsemiTRANS NPN 350V 0.5A TO92-3
2N6533STMicroelectronics2N6520TAonsemiTRANS PNP 350V 0.5A TO92-32N6517BUFairchild SemiconductorSMALL SIGNAL BIPOLAR TRANSISTOR,2N6517onsemiTRANS NPN 350V 0.5A TO922N6542Harris CorporationTRANS NPN 300V 5A TO32N6517TAonsemiTRANS NPN 350V 0.5A TO92-32N6510Microchip TechnologyPOWER BJT2N6542Microchip TechnologyPOWER BJT2N6509TGLittelfuse Inc.SCR 800V 25A TO220AB2N6517RLRAonsemiTRANS NPN 350V 0.5A TO92| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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