1N4448TR Tech Spezifikatioune
Fairchild Semiconductor - 1N4448TR technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - 1N4448TR
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Fairchild (onsemi) | |
| Voltage - Viru (Vf) (Max) @ Wann | 1 V @ 100 mA | |
| Voltage - DC Reverse (Vr) (Max) | 100 V | |
| Technologie | Standard | |
| Supplier Device Package | DO-35 (DO-204AH) | |
| Speed | Small Signal =< 200mA (Io), Any Speed | |
| Serie | - | |
| Reverse Recovery Time (trr) | 4 ns |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | DO-204AH, DO-35, Axial | |
| Package protegéieren | Bulk | |
| Operatiounstemperatur - Junction | 175°C (Max) | |
| Mounting Type | Through Hole | |
| Aktuell - Reverse Leakage @ Vr | 5 µA @ 75 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 200mA | |
| Capacitance @ Vr, F. | 2pF @ 0V, 1MHz |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor 1N4448TR.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | 1N4448TR | 1N4448TR | 1N4448HWS-7 | 1N4448W |
| Hiersteller | Fairchild Semiconductor | Vishay General Semiconductor - Diodes Division | Diodes Incorporated | SMC Diode Solutions |
| Operatiounstemperatur - Junction | 175°C (Max) | 175°C (Max) | -65°C ~ 150°C | -65°C ~ 150°C |
| Reverse Recovery Time (trr) | 4 ns | 8 ns | 4 ns | 4 ns |
| Voltage - Viru (Vf) (Max) @ Wann | 1 V @ 100 mA | 1 V @ 100 mA | 1.25 V @ 150 mA | 1 V @ 10 mA |
| Mounting Type | Through Hole | Through Hole | Surface Mount | Surface Mount |
| Aktuell - Reverse Leakage @ Vr | 5 µA @ 75 V | 5 µA @ 75 V | 100 nA @ 80 V | 5 µA @ 75 V |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 200mA | 150mA | 250mA | 250mA |
| Serie | - | - | - | - |
| Package protegéieren | Bulk | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Supplier Device Package | DO-35 (DO-204AH) | DO-35 (DO-204AH) | SOD-323 | SOD-123 |
| Voltage - DC Reverse (Vr) (Max) | 100 V | 100 V | 80 V | 75 V |
| Speed | Small Signal =< 200mA (Io), Any Speed | Small Signal =< 200mA (Io), Any Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
| Capacitance @ Vr, F. | 2pF @ 0V, 1MHz | 4pF @ 0V, 1MHz | 3.5pF @ 0V, 1MHz | 4pF @ 0V, 1MHz |
| Package / Case | DO-204AH, DO-35, Axial | DO-204AH, DO-35, Axial | SC-76, SOD-323 | SOD-123 |
| Technologie | Standard | Standard | Standard | Standard |
1N4448TRVishay General Semiconductor - Diodes DivisionDIODE GEN PURP 100V 150MA DO351N4448LBL1N4448HWS-7Diodes IncorporatedDIODE GEN PURP 80V 250MA SOD3231N4448WSMC Diode SolutionsDIODE GEN PURP 75V 250MA SOD123
1N4448W RHTaiwan Semiconductor
1N4448HWS-7-GDiodes IncorporatedDIODE GEN PURP 80V 250MA SOD3231N4448HWS-13-FDiodes IncorporatedDIODE GEN PURP 80V 250MA SOD3231N4448W D21N4448HWS-7-FDiodes IncorporatedDIODE GEN PURP 80V 250MA SOD3231N4448WTaiwan Semiconductor CorporationSOD-123F, 75V, 0.15A, SWITCHING1N4448W T5CJ1N4448W T/RPANJIT1N4448HWT-7-FMSV1N4448WDiotec SemiconductorDIODE SOD-123 100V 0.15A 4NS1N4448HWS-7-G-81Diodes Incorporated1N4448WYangzhou Yangjie Electronic Technology Co.,LtdDIODE GEN PURP 100V 250MA SOD123
1N4448HWT-7Diodes IncorporatedDIODE GEN PURP 80V 125MA SOD523
1N4448TRonsemiDIODE GEN PURP 100V 200MA DO35| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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