1N4151TR Tech Spezifikatioune
Fairchild Semiconductor - 1N4151TR technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - 1N4151TR
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Fairchild (onsemi) | |
| Voltage - Viru (Vf) (Max) @ Wann | 1 V @ 50 mA | |
| Voltage - DC Reverse (Vr) (Max) | 75 V | |
| Technologie | Standard | |
| Supplier Device Package | DO-35 (DO-204AH) | |
| Speed | Small Signal =< 200mA (Io), Any Speed | |
| Serie | - | |
| Reverse Recovery Time (trr) | 4 ns |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | DO-204AH, DO-35, Axial | |
| Package protegéieren | Bulk | |
| Operatiounstemperatur - Junction | 175°C (Max) | |
| Mounting Type | Through Hole | |
| Aktuell - Reverse Leakage @ Vr | 50 nA @ 50 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 150mA | |
| Capacitance @ Vr, F. | 2pF @ 0V, 1MHz |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor 1N4151TR.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | 1N4151TR | 1N4151 | 1N4247 | 1N4151TR |
| Hiersteller | Fairchild Semiconductor | NTE Electronics, Inc | Microchip Technology | Vishay General Semiconductor - Diodes Division |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Supplier Device Package | DO-35 (DO-204AH) | DO-35 | A, Axial | DO-35 (DO-204AH) |
| Aktuell - Reverse Leakage @ Vr | 50 nA @ 50 V | 50 nA @ 50 V | 1 µA @ 600 V | 50 nA @ 50 V |
| Operatiounstemperatur - Junction | 175°C (Max) | 175°C (Max) | -65°C ~ 175°C | 175°C (Max) |
| Package / Case | DO-204AH, DO-35, Axial | DO-204AH, DO-35, Axial | A, Axial | DO-204AH, DO-35, Axial |
| Capacitance @ Vr, F. | 2pF @ 0V, 1MHz | 2pF @ 0V, 1MHz | - | 2pF @ 0V, 1MHz |
| Voltage - DC Reverse (Vr) (Max) | 75 V | 75 V | 600 V | 75 V |
| Reverse Recovery Time (trr) | 4 ns | 4 ns | 5 µs | 4 ns |
| Speed | Small Signal =< 200mA (Io), Any Speed | Small Signal =< 200mA (Io), Any Speed | Standard Recovery >500ns, > 200mA (Io) | Small Signal =< 200mA (Io), Any Speed |
| Voltage - Viru (Vf) (Max) @ Wann | 1 V @ 50 mA | 1 V @ 50 mA | 1.3 V @ 3 A | 1 V @ 50 mA |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 150mA | 150mA | 1A | 150mA |
| Package protegéieren | Bulk | Bag | Bulk | Tape & Reel (TR) |
| Serie | - | - | - | - |
| Technologie | Standard | Standard | Standard | Standard |
1N415TRElectro-Films (EFI) / Vishay1N4150W-E3-08Vishay
1N4222MicrosemiIGBT Module1N4151NTE Electronics, IncDIODE GEN PURP 75V 150MA DO351N4247Microchip TechnologyDIODE GEN PURP 600V 1A AXIAL1N4151TRVishay General Semiconductor - Diodes DivisionDIODE GEN PURP 75V 150MA DO351N4151Diotec SemiconductorDIODE GEN PURP 50V 200MA DO351N4151WPANJIT1N4247NTE Electronics, IncDIODE GEN PURP 600V 1A AXIAL1N4150WMSV
1N4151Microchip TechnologyDIODE GEN PURP 75V 200MA DO35
1N4151onsemiDIODE GEN PURP 75V 150MA DO351N4249Microchip TechnologyDIODE GEN PURP 1KV 1A AXIAL
1N4151W-E3-08Vishay General Semiconductor - Diodes DivisionDIODE GEN PURP 50V 150MA SOD123
1N4151Fairchild SemiconductorDIODE GEN PURP 75V 150MA DO351N4151TRonsemiDIODE GEN PURP 75V 150MA DO351N4248-E3/54Electro-Films (EFI) / Vishay1N4249NTE Electronics, IncDIODE GEN PURP 1KV 1A AXIAL| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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