EPC2015C Tech Spezifikatioune
EPC - EPC2015C technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu EPC - EPC2015C
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | EPC | |
| Vgs (th) (Max) @ Id | 2.5V @ 9mA | |
| Vgs (Max) | +6V, -4V | |
| Technologie | GaNFET (Gallium Nitride) | |
| Supplier Device Package | Die | |
| Serie | eGaN® | |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 33A, 5V | |
| Power Dissipation (Max) | - | |
| Package / Case | Die | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -40°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 1180 pF @ 20 V | |
| Gate Charge (Qg) (Max) @ Vgs | 8.7 nC @ 5 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 5V | |
| Entworf fir Source Voltage (Vdss) | 40 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 53A (Ta) | |
| Basis Produktnummer | EPC20 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu EPC EPC2015C.
| Produktiounsattriff |  |
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|
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|---|---|---|---|---|
| Part Number | EPC2015C | EPC2016C | EPC2038 | EPC2024 |
| Hiersteller | EPC | EPC | EPC | EPC |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 33A, 5V | 16mOhm @ 11A, 5V | 3.3Ohm @ 50mA, 5V | 1.5mOhm @ 37A, 5V |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Vgs (Max) | +6V, -4V | +6V, -4V | +6V, -4V | +6V, -4V |
| Power Dissipation (Max) | - | - | - | - |
| Package / Case | Die | Die | Die | Die |
| FET Feature | - | - | - | - |
| Fuert Volt (Max Rds On, Min Rds On) | 5V | 5V | 5V | 5V |
| Basis Produktnummer | EPC20 | EPC20 | EPC20 | EPC20 |
| Input Capacitance (Ciss) (Max) @ Vds | 1180 pF @ 20 V | 420 pF @ 50 V | 8.4 pF @ 50 V | 2100 pF @ 20 V |
| Serie | eGaN® | eGaN® | eGaN® | eGaN® |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 53A (Ta) | 18A (Ta) | 500mA (Ta) | 90A (Ta) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Entworf fir Source Voltage (Vdss) | 40 V | 100 V | 100 V | 40 V |
| Supplier Device Package | Die | Die | Die | Die |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 8.7 nC @ 5 V | 4.5 nC @ 5 V | 0.044 nC @ 5 V | - |
| Vgs (th) (Max) @ Id | 2.5V @ 9mA | 2.5V @ 3mA | 2.5V @ 20µA | 2.5V @ 19mA |
| Operatioun Temperatur | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) |
| Technologie | GaNFET (Gallium Nitride) | GaNFET (Gallium Nitride) | GaNFET (Gallium Nitride) | GaNFET (Gallium Nitride) |
Eroflueden EPC2015C PDF DataDhusts an EPC Dokumentatioun fir EPC2015C - EPC.
EPC2016CEPCGANFET N-CH 100V 18A DIEEPC2038EPCGANFET N-CH 100V 500MA DIEEPC2024EPCGANFET NCH 40V 60A DIEEPC2010CEPCGANFET N-CH 200V 22A DIE OUTLINEEPC2012CEPCGANFET N-CH 200V 5A DIE OUTLINEEPC2039EPCGANFET N-CH 80V 6.8A DIE
EPC1PC8NALTERAEPC2036EPCGANFET N-CH 100V 1.7A DIEEPC2111EPCGAN TRANS ASYMMETRICAL HALF BRID
EPC1PI8IntelIC CONFIG DEVICE 1MBIT 8DIPEPC1PTI8NN/AEPC2015EPCGANFET N-CH 40V 33A DIE OUTLINEEPC2001CEPCGANFET N-CH 100V 36A DIE OUTLINEEPC2019EPCGANFET N-CH 200V 8.5A DIEEPC2014CEPCGANFET N-CH 40V 10A DIE OUTLINEEPC1PI8NIntelIC CONFIG DEVICE 1MBIT 8DIPEPC2051EPCGANFET N-CH 100V 1.7A DIEEPC2106EPCGANFET TRANS SYM 100V BUMPED DIE| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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