KBL401 Tech Spezifikatioune
EIC SEMICONDUCTOR INC. - KBL401 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu EIC SEMICONDUCTOR INC. - KBL401
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | EIC Semiconductor, Inc. | |
| Voltage - Peak Reverse (Max) | 100 V | |
| Voltage - Viru (Vf) (Max) @ Wann | 1.1 V @ 4 A | |
| Technologie | Standard | |
| Supplier Device Package | KBL | |
| Serie | - | |
| Package / Case | 4-SIP, KBL |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Bag | |
| Operatioun Temperatur | -50°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Diode Type | Single Phase | |
| Aktuell - Reverse Leakage @ Vr | 10 µA @ 100 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 4 A |
| ATTRESSIOUN | BESCHREIWUNG |
|---|---|
| RoHs Status | |
| Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
| Erreecht Status | REACH info available upon request |
| ECCN | |
| HTSUS | 8541.10.0000 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu EIC SEMICONDUCTOR INC. KBL401.
| Produktiounsattriff | |
 |
 |
 |
|---|---|---|---|---|
| Part Number | KBL401 | KBL06-E4/51 | KBL406 | KBL401 |
| Hiersteller | EIC SEMICONDUCTOR INC. | Vishay General Semiconductor - Diodes Division | Yangzhou Yangjie Electronic Technology Co.,Ltd | Rectron USA |
| Voltage - Viru (Vf) (Max) @ Wann | 1.1 V @ 4 A | 1.1 V @ 4 A | 1.05 V @ 2 A | 1.1 V @ 4 A |
| Technologie | Standard | Standard | Standard | Standard |
| Diode Type | Single Phase | Single Phase | Single Phase | Single Phase |
| Voltage - Peak Reverse (Max) | 100 V | 600 V | 600 V | 50 V |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Package protegéieren | Bag | Bulk | Box | Tube |
| Package / Case | 4-SIP, KBL | 4-SIP, KBL | 4-ESIP, KBL | 4-SIP, KBL |
| Supplier Device Package | KBL | KBL | KBL | KBL |
| Serie | - | - | - | - |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 4 A | 4 A | 4 A | 4 A |
| Aktuell - Reverse Leakage @ Vr | 10 µA @ 100 V | 5 µA @ 600 V | 10 µA @ 600 V | 10 µA @ 50 V |
| Operatioun Temperatur | -50°C ~ 150°C (TJ) | -50°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Eroflueden KBL401 PDF DataDhusts an EIC SEMICONDUCTOR INC. Dokumentatioun fir KBL401 - EIC SEMICONDUCTOR INC..
KBL06-E4/51Vishay General Semiconductor - Diodes DivisionBRIDGE RECT 1PHASE 600V 4A KBLKBL406Yangzhou Yangjie Electronic Technology Co.,LtdRECT BRIDGE 600V 4A KBLKBL406_B0_10001-PECPANJITKBL425B-HE012HKINGBILLONKBL401Rectron USABRIDGE RECT GLASS 50V 4A KBL
KBL406GGeneSiC SemiconductorBRIDGE RECT 1PHASE 600V 4A KBLKBL408EIC SEMICONDUCTOR INC.STD 4A, CASE TYPE: KBL
KBL406Rectron USABRIDGE RECT GLASS 600V 4A KBLKBL408Rectron USABRIDGE RECT GLASS 800V 4A KBL
KBL406GTaiwan Semiconductor CorporationBRIDGE RECT 1PHASE 800V 4A KBLKBL410EIC SEMICONDUCTOR INC.STD 4A, CASE TYPE: KBL
KBL408Yangjie TechnologyKBL 800V 4.0A Diodes Bridge ReKBL405STSO
KBL04-E4/51Vishay General Semiconductor - Diodes DivisionBRIDGE RECT 1PHASE 400V 4A KBLKBL408_B0_10001-PECPANJITKBL408G-BJGDKBL410Rectron USABRIDGE RECT GLASS 1000V 4A KBLKBL410Yangzhou Yangjie Electronic Technology Co.,LtdRECT BRIDGE 1000V 4A KBL| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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