EGL34D Tech Spezifikatioune
Diotec Semiconductor - EGL34D technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Diotec Semiconductor - EGL34D
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Diotec Semiconductor | |
| Voltage - Viru (Vf) (Max) @ Wann | 1.25 V @ 500 mA | |
| Voltage - DC Reverse (Vr) (Max) | 200 V | |
| Technologie | Standard | |
| Supplier Device Package | DO-213AA, MINI-MELF | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Serie | - | |
| Reverse Recovery Time (trr) | 50 ns |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | DO-213AA | |
| Package protegéieren | Tape & Reel (TR) | |
| Operatiounstemperatur - Junction | -50°C ~ 175°C | |
| Mounting Type | Surface Mount | |
| Aktuell - Reverse Leakage @ Vr | 5 µA @ 200 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 500mA | |
| Capacitance @ Vr, F. | - |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Diotec Semiconductor EGL34D.
| Produktiounsattriff | |
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|---|---|---|---|---|
| Part Number | EGL34D | EGL41B-E3/96 | EGL34DHE3_A/I | EGL34A |
| Hiersteller | Diotec Semiconductor | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division | Diotec Semiconductor |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
| Operatiounstemperatur - Junction | -50°C ~ 175°C | -65°C ~ 175°C | -65°C ~ 175°C | -50°C ~ 175°C |
| Technologie | Standard | Standard | Standard | Standard |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Serie | - | SUPERECTIFIER® | Automotive, AEC-Q101, Superectifier® | - |
| Reverse Recovery Time (trr) | 50 ns | 50 ns | 50 ns | 50 ns |
| Aktuell - Reverse Leakage @ Vr | 5 µA @ 200 V | 5 µA @ 100 V | 5 µA @ 200 V | 5 µA @ 50 V |
| Supplier Device Package | DO-213AA, MINI-MELF | DO-213AB | DO-213AA (GL34) | DO-213AA, MINI-MELF |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 500mA | 1A | 500mA | 500mA |
| Package / Case | DO-213AA | DO-213AB, MELF (Glass) | DO-213AA (Glass) | DO-213AA |
| Voltage - DC Reverse (Vr) (Max) | 200 V | 100 V | 200 V | 50 V |
| Capacitance @ Vr, F. | - | 20pF @ 4V, 1MHz | 7pF @ 4V, 1MHz | - |
| Voltage - Viru (Vf) (Max) @ Wann | 1.25 V @ 500 mA | 1 V @ 1 A | 1.25 V @ 500 mA | 1.25 V @ 500 mA |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Eroflueden EGL34D PDF DataDhusts an Diotec Semiconductor Dokumentatioun fir EGL34D - Diotec Semiconductor.
EGL16-04Fujitsu Electronics America, Inc.IGBT ModuleEGL41B-5400GSEGL41B-E3/96Vishay General Semiconductor - Diodes DivisionDIODE GEN PURP 100V 1A DO213ABEGL16-02FUJIIGBT ModuleEGL34DHE3_A/IVishay General Semiconductor - Diodes DivisionDIODE GP 200V 500MA DO213AAEGL41B-11GSEGL34ADiotec SemiconductorDIODE GEN PURP 50V 500MA DO213AA
EGL41A/46Electro-Films (EFI) / VishayEGL34G-E3/98Vishay General Semiconductor - Diodes DivisionDIODE GP 400V 500MA DO213AAEGL16-06Fujitsu Electronics America, Inc.IGBT ModuleEGL34G-E3/83Vishay General Semiconductor - Diodes DivisionDIODE GP 400V 500MA DO213AAEGL16-16FUJIIGBT ModuleEGL41CGSEGL16-10FUJIIGBT ModuleEGL41AGSEGL34G-E3/82Electro-Films (EFI) / VishayEGL34GHE3/98Vishay General Semiconductor - Diodes DivisionDIODE GP 400V 500MA DO213AAEGL41BGSI Technology| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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