ZXMN3B14FTA Tech Spezifikatioune
Diodes Incorporated - ZXMN3B14FTA technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Diodes Incorporated - ZXMN3B14FTA
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Diodes Incorporated | |
| Vgs (th) (Max) @ Id | 700mV @ 250µA (Min) | |
| Vgs (Max) | ±12V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | SOT-23-3 | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 3.1A, 4.5V | |
| Power Dissipation (Max) | 1W (Ta) | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 568 pF @ 15 V | |
| Gate Charge (Qg) (Max) @ Vgs | 6.7 nC @ 4.5 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 4.5V | |
| Entworf fir Source Voltage (Vdss) | 30 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2.9A (Ta) | |
| Basis Produktnummer | ZXMN3 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Diodes Incorporated ZXMN3B14FTA.
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|---|---|---|---|---|
| Part Number | ZXMN3B14FTA | ZXMN3F30FHTA | ZXMN3B04N8TC | ZXMN3B04N8TA |
| Hiersteller | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Vgs (th) (Max) @ Id | 700mV @ 250µA (Min) | 3V @ 250µA | 700mV @ 250µA (Min) | 700mV @ 250µA (Min) |
| Gate Charge (Qg) (Max) @ Vgs | 6.7 nC @ 4.5 V | 7.7 nC @ 10 V | 23.1 nC @ 4.5 V | 23.1 nC @ 4.5 V |
| Serie | - | - | - | - |
| FET Feature | - | - | - | - |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | SOT-23-3 | SOT-23-3 | 8-SO | 8-SO |
| Input Capacitance (Ciss) (Max) @ Vds | 568 pF @ 15 V | 318 pF @ 15 V | 2480 pF @ 15 V | 2480 pF @ 15 V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2.9A (Ta) | 3.8A (Ta) | 7.2A (Ta) | 7.2A (Ta) |
| Vgs (Max) | ±12V | ±20V | ±12V | ±12V |
| Basis Produktnummer | ZXMN3 | ZXMN3 | ZXMN3 | ZXMN3 |
| Power Dissipation (Max) | 1W (Ta) | 950mW (Ta) | 2W (Ta) | 2W (Ta) |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Entworf fir Source Voltage (Vdss) | 30 V | 30 V | 30 V | 30 V |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 4.5V | 4.5V, 10V | 2.5V, 4.5V | 2.5V, 4.5V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 3.1A, 4.5V | 47mOhm @ 3.2A, 10V | 25mOhm @ 7.2A, 4.5V | 25mOhm @ 7.2A, 4.5V |
Eroflueden ZXMN3B14FTA PDF DataDhusts an Diodes Incorporated Dokumentatioun fir ZXMN3B14FTA - Diodes Incorporated.
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ZXMN3AM832TADiodes IncorporatedMOSFET 2N-CH 30V 2.9A 8MLPZXMN3F318DN8TADiodes IncorporatedZXMN3B04N8TADiodes IncorporatedMOSFET N-CH 30V 7.2A 8SOZXMN3B01FTADiodes IncorporatedMOSFET N-CH 30V 1.7A SOT23-3| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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