ZXMN3A04DN8TC Tech Spezifikatioune
Diodes Incorporated - ZXMN3A04DN8TC technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Diodes Incorporated - ZXMN3A04DN8TC
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Diodes Incorporated | |
| Vgs (th) (Max) @ Id | 1V @ 250µA (Min) | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 8-SO | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 12.6A, 10V | |
| Power - Max | 1.81W | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 1890pF @ 15V | |
| Gate Charge (Qg) (Max) @ Vgs | 36.8nC @ 10V | |
| FET Feature | Logic Level Gate | |
| Entworf fir Source Voltage (Vdss) | 30V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6.5A | |
| Konfiguratioun | 2 N-Channel (Dual) | |
| Basis Produktnummer | ZXMN3 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Diodes Incorporated ZXMN3A04DN8TC.
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|---|---|---|---|---|
| Part Number | ZXMN3A04DN8TC | ZXMN3A04DN8TA | ZXMN3A06DN8TC | ZXMN3A06DN8TA |
| Hiersteller | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Entworf fir Source Voltage (Vdss) | 30V | 30V | 30V | 30V |
| FET Feature | Logic Level Gate | Logic Level Gate | Logic Level Gate | Logic Level Gate |
| Supplier Device Package | 8-SO | 8-SO | 8-SO | 8-SO |
| Konfiguratioun | 2 N-Channel (Dual) | 2 N-Channel (Dual) | 2 N-Channel (Dual) | 2 N-Channel (Dual) |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Power - Max | 1.81W | 1.81W | 1.8W | 1.8W |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6.5A | 6.5A | 4.9A | 4.9A |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 12.6A, 10V | 20mOhm @ 12.6A, 10V | 35mOhm @ 9A, 10V | 35mOhm @ 9A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1890pF @ 15V | 1890pF @ 15V | 796pF @ 25V | 796pF @ 25V |
| Vgs (th) (Max) @ Id | 1V @ 250µA (Min) | 1V @ 250µA (Min) | 1V @ 250µA (Min) | 1V @ 250µA (Min) |
| Serie | - | - | - | - |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Gate Charge (Qg) (Max) @ Vgs | 36.8nC @ 10V | 36.8nC @ 10V | 17.5nC @ 10V | 17.5nC @ 10V |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) |
| Basis Produktnummer | ZXMN3 | ZXMN3 | ZXMN3 | ZXMN3 |
Eroflueden ZXMN3A04DN8TC PDF DataDhusts an Diodes Incorporated Dokumentatioun fir ZXMN3A04DN8TC - Diodes Incorporated.
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ZXMN3A04KTCDiodes IncorporatedMOSFET N-CH 30V 18.4A DPAKZXMN3A02X8TADiodes IncorporatedMOSFET N-CH 30V 5.3A 8MSOP| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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