ZXMN2B14FHTA Tech Spezifikatioune
Diodes Incorporated - ZXMN2B14FHTA technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Diodes Incorporated - ZXMN2B14FHTA
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Diodes Incorporated | |
Vgs (th) (Max) @ Id | 1V @ 250µA | |
Vgs (Max) | ±8V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | SOT-23-3 | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 55mOhm @ 3.5A, 4.5V | |
Power Dissipation (Max) | 1W (Ta) | |
Package / Case | TO-236-3, SC-59, SOT-23-3 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 872 pF @ 10 V | |
Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 4.5 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 1.8V, 4.5V | |
Entworf fir Source Voltage (Vdss) | 20 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3.5A (Ta) | |
Basis Produktnummer | ZXMN2 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Diodes Incorporated ZXMN2B14FHTA.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | ZXMN2B14FHTA | ZXMN2B03E6TA | ZXMN2A14FTA | ZXMN2F34FHTA |
Hiersteller | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Supplier Device Package | SOT-23-3 | SOT-23-6 | SOT-23-3 | SOT-23-3 |
Serie | - | - | - | - |
Fuert Volt (Max Rds On, Min Rds On) | 1.8V, 4.5V | 1.8V, 4.5V | 2.5V, 4.5V | 2.5V, 4.5V |
Power Dissipation (Max) | 1W (Ta) | 1.1W (Ta) | 1W (Ta) | 950mW (Ta) |
Package / Case | TO-236-3, SC-59, SOT-23-3 | SOT-23-6 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
FET Feature | - | - | - | - |
Basis Produktnummer | ZXMN2 | ZXMN2 | ZXMN2 | ZXMN2 |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3.5A (Ta) | 4.3A (Ta) | 3.4A (Ta) | 3.4A (Ta) |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Input Capacitance (Ciss) (Max) @ Vds | 872 pF @ 10 V | 1160 pF @ 10 V | 544 pF @ 10 V | 277 pF @ 10 V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 4.5 V | 14.5 nC @ 4.5 V | 6.6 nC @ 4.5 V | 2.8 nC @ 4.5 V |
Rds On (Max) @ Id, Vgs | 55mOhm @ 3.5A, 4.5V | 40mOhm @ 4.3A, 4.5V | 60mOhm @ 3.4A, 4.5V | 60mOhm @ 2.5A, 4.5V |
Vgs (Max) | ±8V | ±8V | ±12V | ±12V |
Entworf fir Source Voltage (Vdss) | 20 V | 20 V | 20 V | 20 V |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Vgs (th) (Max) @ Id | 1V @ 250µA | 1V @ 250µA | 700mV @ 250µA (Min) | 1.5V @ 250µA |
Eroflueden ZXMN2B14FHTA PDF DataDhusts an Diodes Incorporated Dokumentatioun fir ZXMN2B14FHTA - Diodes Incorporated.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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