ZXMN10A08E6TC Tech Spezifikatioune
Diodes Incorporated - ZXMN10A08E6TC technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Diodes Incorporated - ZXMN10A08E6TC
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Diodes Incorporated | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | SOT-26 | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 250mOhm @ 3.2A, 10V | |
Power Dissipation (Max) | 1.1W (Ta) | |
Package / Case | SOT-23-6 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 405 pF @ 50 V | |
Gate Charge (Qg) (Max) @ Vgs | 7.7 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 6V, 10V | |
Entworf fir Source Voltage (Vdss) | 100 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1.5A (Ta) | |
Basis Produktnummer | ZXMN10 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Diodes Incorporated ZXMN10A08E6TC.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | ZXMN10A08E6TC | ZXMN10A08E6QTA | ZXMN10A09KTC | ZXMN10A11GTA |
Hiersteller | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Package / Case | SOT-23-6 | SOT-23-6 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-261-4, TO-261AA |
Gate Charge (Qg) (Max) @ Vgs | 7.7 nC @ 10 V | 7.7 nC @ 10 V | 26 nC @ 10 V | 5.4 nC @ 10 V |
Basis Produktnummer | ZXMN10 | - | ZXMN10 | ZXMN10 |
Serie | - | Automotive, AEC-Q101 | - | - |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 250mOhm @ 3.2A, 10V | 250mOhm @ 3.2A, 10V | 85mOhm @ 4.6A, 10V | 350mOhm @ 2.6A, 10V |
Fuert Volt (Max Rds On, Min Rds On) | 6V, 10V | 6V, 10V | 6V, 10V | 6V, 10V |
FET Feature | - | - | - | - |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Power Dissipation (Max) | 1.1W (Ta) | 1.1W (Ta) | 2.15W (Ta) | 2W (Ta) |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 405 pF @ 50 V | 405 pF @ 50 V | 1313 pF @ 50 V | 274 pF @ 50 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1.5A (Ta) | 1.5A (Ta) | 5A (Ta) | 1.7A (Ta) |
Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
Supplier Device Package | SOT-26 | SOT-26 | TO-252-3 | SOT-223-3 |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Entworf fir Source Voltage (Vdss) | 100 V | 100 V | 100 V | 100 V |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Eroflueden ZXMN10A08E6TC PDF DataDhusts an Diodes Incorporated Dokumentatioun fir ZXMN10A08E6TC - Diodes Incorporated.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.