ZXMC4559DN8TA Tech Spezifikatioune
Diodes Incorporated - ZXMC4559DN8TA technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Diodes Incorporated - ZXMC4559DN8TA
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Diodes Incorporated | |
Vgs (th) (Max) @ Id | 1V @ 250µA (Min) | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | 8-SO | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 55mOhm @ 4.5A, 10V | |
Power - Max | 1.25W | |
Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 1063pF @ 30V | |
Gate Charge (Qg) (Max) @ Vgs | 20.4nC @ 10V | |
FET Feature | Logic Level Gate | |
Entworf fir Source Voltage (Vdss) | 60V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3.6A, 2.6A | |
Konfiguratioun | N and P-Channel | |
Basis Produktnummer | ZXMC4559 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Diodes Incorporated ZXMC4559DN8TA.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | ZXMC4559DN8TA | ZXMC4A16DN8TA | ZXMC3AMCTA | ZXMC4A16DN8TC |
Hiersteller | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Input Capacitance (Ciss) (Max) @ Vds | 1063pF @ 30V | 770pF @ 40V, 1000pF @ 20V | 190pF @ 25V | 770pF @ 40V, 1000pF @ 20V |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Konfiguratioun | N and P-Channel | N and P-Channel Complementary | N and P-Channel | N and P-Channel Complementary |
Vgs (th) (Max) @ Id | 1V @ 250µA (Min) | 1V @ 250mA (Min) | 3V @ 250µA | 1V @ 250mA (Min) |
Entworf fir Source Voltage (Vdss) | 60V | 40V | 30V | 40V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3.6A, 2.6A | 5.2A (Ta), 4.7A (Ta) | 2.9A, 2.1A | 5.2A (Ta), 4.7A (Ta) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Serie | - | - | - | - |
FET Feature | Logic Level Gate | Logic Level Gate | Logic Level Gate | Logic Level Gate |
Power - Max | 1.25W | 2.1W | 1.7W | 2.1W |
Supplier Device Package | 8-SO | 8-SO | DFN3020B-8 | 8-SO |
Gate Charge (Qg) (Max) @ Vgs | 20.4nC @ 10V | 17nC @ 10V | 3.9nC @ 10V | 17nC @ 10V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Package / Case | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-WDFN Exposed Pad | 8-SOIC (0.154", 3.90mm Width) |
Rds On (Max) @ Id, Vgs | 55mOhm @ 4.5A, 10V | 50mOhm @ 4.5A, 10V, 60mOhm @ 3.8A, 10V | 120mOhm @ 2.5A, 10V | 50mOhm @ 4.5A, 10V, 60mOhm @ 3.8A, 10V |
Basis Produktnummer | ZXMC4559 | ZXMC4A16 | ZXMC3 | ZXMC4A16 |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Eroflueden ZXMC4559DN8TA PDF DataDhusts an Diodes Incorporated Dokumentatioun fir ZXMC4559DN8TA - Diodes Incorporated.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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