ZXM61P03FTA Tech Spezifikatioune
Diodes Incorporated - ZXM61P03FTA technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Diodes Incorporated - ZXM61P03FTA
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Diodes Incorporated | |
Vgs (th) (Max) @ Id | 1V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | SOT-23-3 | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 350mOhm @ 600mA, 10V | |
Power Dissipation (Max) | 625mW (Ta) | |
Package / Case | TO-236-3, SC-59, SOT-23-3 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 140 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 4.8 nC @ 10 V | |
FET Typ | P-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 30 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1.1A (Ta) | |
Basis Produktnummer | ZXM61P03 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Diodes Incorporated ZXM61P03FTA.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | ZXM61P03FTA | ZXM61N03FTC | ZXM62N03E6TA | ZXM61P03FTC |
Hiersteller | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Entworf fir Source Voltage (Vdss) | 30 V | 30 V | 30 V | 30 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1.1A (Ta) | 1.4A (Ta) | 3.2A (Ta) | 1.1A (Ta) |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | - | 4.5V, 10V |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Digi-Reel® | Tape & Reel (TR) |
Basis Produktnummer | ZXM61P03 | - | - | - |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | - | -55°C ~ 150°C (TJ) |
Vgs (Max) | ±20V | ±20V | - | ±20V |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Serie | - | - | - | - |
Input Capacitance (Ciss) (Max) @ Vds | 140 pF @ 25 V | 150 pF @ 25 V | 380 pF @ 25 V | 140 pF @ 25 V |
FET Feature | - | - | - | - |
Power Dissipation (Max) | 625mW (Ta) | 625mW (Ta) | - | 625mW (Ta) |
Supplier Device Package | SOT-23-3 | SOT-23-3 | SOT-23-6 | SOT-23-3 |
Rds On (Max) @ Id, Vgs | 350mOhm @ 600mA, 10V | 220mOhm @ 910mA, 10V | 110mOhm @ 2.2A, 10V | 350mOhm @ 600mA, 10V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
FET Typ | P-Channel | N-Channel | N-Channel | P-Channel |
Vgs (th) (Max) @ Id | 1V @ 250µA | 1V @ 250µA | 1V @ 250µA | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 4.8 nC @ 10 V | 4.1 nC @ 10 V | 9.6 nC @ 10 V | 4.8 nC @ 10 V |
Package / Case | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | SOT-23-6 | TO-236-3, SC-59, SOT-23-3 |
Eroflueden ZXM61P03FTA PDF DataDhusts an Diodes Incorporated Dokumentatioun fir ZXM61P03FTA - Diodes Incorporated.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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