VN10LFTA Tech Spezifikatioune
Diodes Incorporated - VN10LFTA technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Diodes Incorporated - VN10LFTA
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Diodes Incorporated | |
| Vgs (th) (Max) @ Id | 2.5V @ 1mA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | SOT-23-3 | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 5Ohm @ 500mA, 10V | |
| Power Dissipation (Max) | 330mW (Ta) | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 60 pF @ 25 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 5V, 10V | |
| Entworf fir Source Voltage (Vdss) | 60 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 150mA (Ta) | |
| Basis Produktnummer | VN10 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Diodes Incorporated VN10LFTA.
| Produktiounsattriff |  |
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 |
 |
|---|---|---|---|---|
| Part Number | VN10LFTA | VN10LP | VN10LPSTZ | VN10LM |
| Hiersteller | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | Motorola |
| Power Dissipation (Max) | 330mW (Ta) | 625mW (Ta) | 625mW (Ta) | - |
| Vgs (th) (Max) @ Id | 2.5V @ 1mA | 2.5V @ 1mA | 2.5V @ 1mA | - |
| Entworf fir Source Voltage (Vdss) | 60 V | 60 V | 60 V | - |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 150mA (Ta) | 270mA (Ta) | 270mA (Ta) | - |
| Vgs (Max) | ±20V | ±20V | ±20V | - |
| Serie | - | - | - | * |
| Package protegéieren | Tape & Reel (TR) | Bulk | Tape & Box (TB) | Bulk |
| Supplier Device Package | SOT-23-3 | TO-92 | E-Line (TO-92 compatible) | - |
| Input Capacitance (Ciss) (Max) @ Vds | 60 pF @ 25 V | 60 pF @ 25 V | 60 pF @ 25 V | - |
| FET Feature | - | - | - | - |
| Fuert Volt (Max Rds On, Min Rds On) | 5V, 10V | 5V, 10V | 5V, 10V | - |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | - |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - |
| Rds On (Max) @ Id, Vgs | 5Ohm @ 500mA, 10V | 5Ohm @ 500mA, 10V | 5Ohm @ 500mA, 10V | - |
| Basis Produktnummer | VN10 | VN10 | - | - |
| FET Typ | N-Channel | N-Channel | N-Channel | - |
| Mounting Type | Surface Mount | Through Hole | Through Hole | - |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | TO-226-3, TO-92-3 (TO-226AA) | E-Line-3, Formed Leads | - |
Eroflueden VN10LFTA PDF DataDhusts an Diodes Incorporated Dokumentatioun fir VN10LFTA - Diodes Incorporated.
VN10LLSElectro-Films (EFI) / VishayVN10LPDiodes IncorporatedMOSFET N-CH 60V 270MA TO92-3VN10LESILICONIXVN10LPSTZDiodes IncorporatedMOSFET VMOS N-CHAN TO92-3VN10KT-T1-E3Electro-Films (EFI) / VishayVN10LPSTZ MOSZETEX/DIODES
VN10LFTA MOSDiodes IncorporatedVN10LMMotorolaSMALL SIGNAL N-CHANNEL MOSFETVN10KT-T1-GE3Electro-Films (EFI) / VishayVN10LFVBSEMIVN10KMSIVN10KN3-G-P002Microchip TechnologyMOSFET N-CH 60V 310MA TO92-3
VN1160-1STMicroelectronicsIC OFFLINE SWITCH IPAKVN10LP MOSDiodes Incorporated
VN1160STMicroelectronicsIC OFFLINE SWITCH DPAKVN10KN3-GMicrochip TechnologyMOSFET N-CH 60V 310MA TO92-3VN10KMAElectro-Films (EFI) / VishayVN10KN3SUPERTEX| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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