SF10BG-T Tech Spezifikatioune
Diodes Incorporated - SF10BG-T technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Diodes Incorporated - SF10BG-T
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Diodes Incorporated | |
| Voltage - Viru (Vf) (Max) @ Wann | 950 mV @ 1 A | |
| Voltage - DC Reverse (Vr) (Max) | 100 V | |
| Technologie | Standard | |
| Supplier Device Package | DO-41 | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Serie | - | |
| Reverse Recovery Time (trr) | 35 ns |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | DO-204AL, DO-41, Axial | |
| Package protegéieren | Tape & Reel (TR) | |
| Operatiounstemperatur - Junction | -65°C ~ 150°C | |
| Mounting Type | Through Hole | |
| Aktuell - Reverse Leakage @ Vr | 10 µA @ 100 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 1A | |
| Capacitance @ Vr, F. | 75pF @ 4V, 1MHz |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Diodes Incorporated SF10BG-T.
| Produktiounsattriff |  |
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|
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|---|---|---|---|---|
| Part Number | SF10BG-T | SF10DG-T | SF10D-M1 | SF10B13 |
| Hiersteller | Diodes Incorporated | Diodes Incorporated | MITSUBISHI | TAEC Product (Toshiba Electronic Devices and Stora |
| Serie | - | - | - | - |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | - | - |
| Voltage - Viru (Vf) (Max) @ Wann | 950 mV @ 1 A | 950 mV @ 1 A | - | - |
| Package / Case | DO-204AL, DO-41, Axial | DO-204AL, DO-41, Axial | - | - |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 1A | 1A | - | - |
| Voltage - DC Reverse (Vr) (Max) | 100 V | 200 V | - | - |
| Operatiounstemperatur - Junction | -65°C ~ 150°C | -65°C ~ 150°C | - | - |
| Reverse Recovery Time (trr) | 35 ns | 35 ns | - | - |
| Mounting Type | Through Hole | Through Hole | - | - |
| Supplier Device Package | DO-41 | DO-41 | - | - |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | - | - |
| Aktuell - Reverse Leakage @ Vr | 10 µA @ 100 V | 10 µA @ 200 V | - | - |
| Capacitance @ Vr, F. | 75pF @ 4V, 1MHz | 75pF @ 4V, 1MHz | - | - |
| Technologie | Standard | Standard | - | - |
Eroflueden SF10BG-T PDF DataDhusts an Diodes Incorporated Dokumentatioun fir SF10BG-T - Diodes Incorporated.
SF10D-M1MITSUBISHIIGBT ModuleSF10B13TAEC Product (Toshiba Electronic Devices and StoraIGBT ModuleSF10D13TAEC Product (Toshiba Electronic Devices and StoraIGBT ModuleSF10A400SHAUKSF10A600HPIAUKSF10A400HPIAUKSF10D300D2AUKSF10D-H1MITSUBISHIIGBT ModuleSF10A300HDAUKSF10F13TAEC Product (Toshiba Electronic Devices and StoraIGBT ModuleSF10867AIGBT ModuleSF10G13TAEC Product (Toshiba Electronic Devices and StoraIGBT ModuleSF10A300HPRAUKSF10DE-H2MITSUBISHIIGBT ModuleSF10DG-TDiodes IncorporatedDIODE GEN PURP 200V 1A DO41SF10DL-H1-4MITSUBISHIIGBT ModuleSF10A400HDAUKSF10A400HDSAUK| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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