S1MSP1-7 Tech Spezifikatioune
Diodes Incorporated - S1MSP1-7 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Diodes Incorporated - S1MSP1-7
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Diodes Incorporated | |
| Voltage - Viru (Vf) (Max) @ Wann | 1.1 V @ 1 A | |
| Voltage - DC Reverse (Vr) (Max) | 1000 V | |
| Technologie | Standard | |
| Supplier Device Package | PowerDI™ 123 | |
| Speed | Standard Recovery >500ns, > 200mA (Io) | |
| Serie | - | |
| Reverse Recovery Time (trr) | 1.2 µs |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | POWERDI®123 | |
| Package protegéieren | Tape & Reel (TR) | |
| Operatiounstemperatur - Junction | -55°C ~ 150°C | |
| Mounting Type | Surface Mount | |
| Aktuell - Reverse Leakage @ Vr | 10 µA @ 1000 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 1A | |
| Capacitance @ Vr, F. | 4pF @ 4V, 1MHz | |
| Basis Produktnummer | S1M |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Diodes Incorporated S1MSP1-7.
| Produktiounsattriff |  |
 |
 |
 |
|---|---|---|---|---|
| Part Number | S1MSP1-7 | S1MHE3/61T | S1MSWF-7 | S1MLWHRVG |
| Hiersteller | Diodes Incorporated | Vishay General Semiconductor - Diodes Division | Diodes Incorporated | TSC (Taiwan Semiconductor) |
| Aktuell - Reverse Leakage @ Vr | 10 µA @ 1000 V | 5 µA @ 1000 V | 10 µA @ 1000 V | 1µA @ 1000V |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 1A | 1A | 1A | 1A |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | - |
| Voltage - Viru (Vf) (Max) @ Wann | 1.1 V @ 1 A | 1.1 V @ 1 A | 1.1 V @ 1 A | 1.1V @ 1A |
| Package / Case | POWERDI®123 | DO-214AC, SMA | SOD-123F | SOD-123W |
| Voltage - DC Reverse (Vr) (Max) | 1000 V | 1000 V | 1000 V | 1000V |
| Speed | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Capacitance @ Vr, F. | 4pF @ 4V, 1MHz | - | 6pF @ 4V, 1MHz | - |
| Basis Produktnummer | S1M | S1M | S1M | - |
| Serie | - | Automotive, AEC-Q100 | Automotive, AEC-Q101 | - |
| Supplier Device Package | PowerDI™ 123 | DO-214AC (SMA) | SOD-123F | SOD123W |
| Operatiounstemperatur - Junction | -55°C ~ 150°C | -55°C ~ 150°C | -55°C ~ 150°C | -55°C ~ 175°C |
| Technologie | Standard | Standard | Standard | - |
| Reverse Recovery Time (trr) | 1.2 µs | 1.8 µs | 1 µs | - |
Eroflueden S1MSP1-7 PDF DataDhusts an Diodes Incorporated Dokumentatioun fir S1MSP1-7 - Diodes Incorporated.
S1MHE3-A/HElectro-Films (EFI) / VishayS1MHE3/61TVishay General Semiconductor - Diodes DivisionDIODE GEN PURP 1KV 1A DO214ACS1MSWF-7Diodes IncorporatedDIODE GEN PURP 1KV 1A SOD123F
S1M_NLFairchild (onsemi)S1MLWHRVGTSC (Taiwan Semiconductor)DIODE GEN PURP 1KV 1A SOD123WS1MHE3-A/IElectro-Films (EFI) / VishayS1MWF-7Diodes IncorporatedDIODE GEN PURP 1KV 1A SOD123F
S1MHR2GTaiwan SemiconductorS1MS R3Taiwan SemiconductorS1MSWFQ-7Diodes IncorporatedDIODE GEN PURP 1KV 1A SOD123FS1ML R3Taiwan SemiconductorS1MHE3Electro-Films (EFI) / VishayS1MHE3_A/IVishay General Semiconductor - Diodes DivisionDIODE GEN PURP 1KV 1A DO214ACS1ML SHRVGTaiwan SemiconductorS1MLHRVGTaiwan Semiconductor CorporationDIODE GEN PURP 1KV 1A SUB SMAS1ML R2S1MSP1-FDiodes IncorporatedS1MHE3_A/HVishay General Semiconductor - Diodes DivisionDIODE GEN PURP 1KV 1A DO214AC| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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