RABF210-13 Tech Spezifikatioune
Diodes Incorporated - RABF210-13 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Diodes Incorporated - RABF210-13
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Diodes Incorporated | |
| Voltage - Peak Reverse (Max) | 1 kV | |
| Voltage - Viru (Vf) (Max) @ Wann | 1.3 V @ 2 A | |
| Technologie | Standard | |
| Supplier Device Package | 4-SOPA | |
| Serie | - | |
| Package / Case | 4-SMD, Gull Wing |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Tape & Reel (TR) | |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Diode Type | Single Phase | |
| Aktuell - Reverse Leakage @ Vr | 5 µA @ 1000 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 2 A | |
| Basis Produktnummer | RABF210 |
| ATTRESSIOUN | BESCHREIWUNG |
|---|---|
| RoHs Status | |
| Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
| Erreecht Status | REACH Affected |
| ECCN | EAR99 |
| HTSUS | 8541.10.0080 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Diodes Incorporated RABF210-13.
| Produktiounsattriff |  |
 |
 |
 |
|---|---|---|---|---|
| Part Number | RABF210-13 | EDF1BS-E3/77 | RABS15M REG | BU2508-E3/45 |
| Hiersteller | Diodes Incorporated | Vishay General Semiconductor - Diodes Division | Taiwan Semiconductor Corporation | Vishay General Semiconductor - Diodes Division |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Serie | - | - | - | - |
| Diode Type | Single Phase | Single Phase | Single Phase | Single Phase |
| Voltage - Peak Reverse (Max) | 1 kV | 100 V | 1 kV | 800 V |
| Supplier Device Package | 4-SOPA | DFS | ABS-L | isoCINK+™ BU |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 2 A | 1 A | 1.5 A | 3.5 A |
| Voltage - Viru (Vf) (Max) @ Wann | 1.3 V @ 2 A | 1.05 V @ 1 A | 1 V @ 1.5 A | 1.05 V @ 12.5 A |
| Package / Case | 4-SMD, Gull Wing | 4-SMD, Gull Wing | 4-SMD, Gull Wing | 4-SIP, BU |
| Technologie | Standard | Standard | Standard | Standard |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Through Hole |
| Basis Produktnummer | RABF210 | EDF1 | RABS15 | BU2508 |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tray |
| Aktuell - Reverse Leakage @ Vr | 5 µA @ 1000 V | 5 µA @ 100 V | 1 µA @ 1000 V | 5 µA @ 600 V |
Eroflueden RABF210-13 PDF DataDhusts an Diodes Incorporated Dokumentatioun fir RABF210-13 - Diodes Incorporated.
EDF1BS-E3/77Vishay General Semiconductor - Diodes DivisionBRIDGE RECT 1PHASE 100V 1A DFS
RABBIT2000RABBITRAB908LRFSEMIRABBIT3000RABBITRABS15M REGTaiwan Semiconductor CorporationBRIDGE RECT 1P 1KV 1.5A ABS-LRABN-IIQZNOIGBT ModuleBU2508-E3/45Vishay General Semiconductor - Diodes DivisionBRIDGE RECT 1P 800V 3.5A BU
MB6S-E3/45Vishay General Semiconductor - Diodes DivisionBRIDGE RECT 1P 600V TO269AA
MB352WDiodes IncorporatedBRIDGE RECT 1PHASE 200V 35A MB-W
MP256Rectron USABRIDGE RECT GLASS 600V 25A MP-25RAB908HRFSEMIRAB08220GFANYRABN-220ZLENOIGBT ModuleABS210-13Diodes IncorporatedBRIDGE RECT 1PHASE 1KV 2A 4SOPARABN-22QZSiemensIGBT Module
DBD10G-TM-EonsemiBRIDGE RECT 1PHASE 600V 1ARAB916HRFSEMIRABN-22G2LNIECIGBT Module| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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