MJD350-13 Tech Spezifikatioune
Diodes Incorporated - MJD350-13 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Diodes Incorporated - MJD350-13
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Diodes Incorporated | |
| Voltage - Collector Emitter Breakdown (Max) | 300 V | |
| Vce Saturation (Max) @ Ib, Ic | - | |
| Transistor Type | PNP | |
| Supplier Device Package | TO-252-3 | |
| Serie | - | |
| Power - Max | 15 W | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Tape & Reel (TR) | |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Frequenz - Iwwergang | - | |
| DC Aktuelle Verstärker (hFE) (Min) @ Ic, Vce | 30 @ 50mA, 10V | |
| Aktuell - Kollektorat Cutoff (Max) | 100µA (ICBO) | |
| Aktuell - Sammler (Ic) (Max) | 500 mA | |
| Basis Produktnummer | MJD350 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Diodes Incorporated MJD350-13.
| Produktiounsattriff |  |
 |
|
 |
|---|---|---|---|---|
| Part Number | MJD350-13 | MJD340T4 | MJD350T4 | MJD350 |
| Hiersteller | Diodes Incorporated | STMicroelectronics | STMicroelectronics | Fairchild Semiconductor |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | 150°C (TJ) | 150°C (TJ) | - |
| Serie | - | - | - | - |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tube |
| Aktuell - Kollektorat Cutoff (Max) | 100µA (ICBO) | 100µA (ICBO) | 100µA (ICBO) | 100µA |
| Aktuell - Sammler (Ic) (Max) | 500 mA | 500 mA | 500 mA | 500 mA |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Voltage - Collector Emitter Breakdown (Max) | 300 V | 300 V | 300 V | 300 V |
| DC Aktuelle Verstärker (hFE) (Min) @ Ic, Vce | 30 @ 50mA, 10V | 30 @ 50mA, 10V | 30 @ 50mA, 10V | 30 @ 50mA, 10V |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Power - Max | 15 W | 15 W | 15 W | 15 W |
| Vce Saturation (Max) @ Ib, Ic | - | - | - | - |
| Basis Produktnummer | MJD350 | MJD340 | MJD350 | - |
| Transistor Type | PNP | NPN | PNP | PNP |
| Frequenz - Iwwergang | - | - | - | - |
| Supplier Device Package | TO-252-3 | DPAK | DPAK | DPAK |
Eroflueden MJD350-13 PDF DataDhusts an Diodes Incorporated Dokumentatioun fir MJD350-13 - Diodes Incorporated.
MJD41CCJMJD340T4STMicroelectronicsTRANS NPN 300V 0.5A DPAKMJD350-1MOTOROLAMJD350TF MOSFairchild (onsemi)MJD350T4STMicroelectronicsTRANS PNP 300V 0.5A DPAK
MJD41C MOSAMI Semiconductor/onsemiMJD340T4G-1AMI Semiconductor/onsemiMJD350Fairchild SemiconductorTRANS PNP 300V 0.5A DPAKMJD340TFFairchild SemiconductorTRANS NPN 300V 0.5A DPAK
MJD340TFonsemiTRANS NPN 300V 0.5A DPAK
MJD350T4GonsemiTRANS PNP 300V 0.5A DPAKMJD350T4onsemiTRANS PWR PNP 0.5A 300V DPAK
MJD340T4 MOSSTMicroelectronicsMJD340TF MOSFairchild (onsemi)MJD350TFonsemiTRANS PNP 300V 0.5A DPAKMJD350T4 MOSSTMicroelectronicsMJD340T4GonsemiTRANS NPN 300V 0.5A DPAKMJD350GonsemiTRANS PNP 300V 0.5A DPAK| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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